The growth of InAs quantum dots (QDs) by organometallic vapor phase epitaxy (OMVPE) for use in GaAs based photovoltaics devices was investigated. Growth of InAs quantum dots was optimized according to their morphology and photoluminescence using growth temperature and V/III ratio. The optimized InAs QDs had sizes near 7×40 nm with a dot density of 5(±0.5)×1010 cm-2. These optimized QDs were incorporated into GaAs based p-i-n solar cell structures. Cells with single and multiple (5x) layers of QDs were embedded in the i-region of the GaAs p-i-n cell structure. An array of 1 cm2 solar cells was fabricated on these wafers, IV curves collected under 1 sun AM0 conditions, and the spectral response measured from 300-1100 nm. The quantum efficiency for each QD cell clearly shows sub-bandgap conversion, indicating a contribution due to the QDs. Unfortunately, the overarching result of the addition of quantum dots to the baseline p-i-n GaAs cells was a decrease in efficiency. However, the addition of thin GaP strain compensating layers between the QD layers, was found to reduce this efficiency degradation and significantly enhance the subgap conversion in comparison to the un-compensated quantum dot cells.
A new optical temperature sensor suitable for high temperatures (⩾1700 K) and harsh environments is introduced. The key component of the sensor is the rare earth material contained at the end of a sensor that is in contact with the sample being measured. The measured narrow wavelength band emission from the rare earth is used to deduce the sample temperature. A simplified relation between the temperature and measured radiation was verified experimentally. The upper temperature limit of the sensor is determined by material limits to be approximately 2000 °C. The lower limit, determined by the minimum detectable radiation, is found to be approximately 700 K. At high temperatures 1 K resolution is predicted. Also, millisecond response times are calculated.
A selective emitter consisting of two layers separated by a vacuum is analyzed. The bottom layer consists of a selective emitting material such as a rare earth containing crystal on a metal substrate. The top layer, which blocks long wavelength radiation, is a window such as sapphire with a deposited metal film. As a result of reduced long wavelength emission, the theoretical analysis shows that the emitter efficiency can be increased by nearly a factor of 2.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.