Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) Abstract. We have studied the low temperature charge carriers mobility in bulk single crystals of InAs-and InP-rich InAs-InP solid solutions irradiated with maximum integral flux 2·10 18 n/cm 2 of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.
The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for explanation of results and found to be in fair agreement with experimental data. Comparison of experimental data with theoretical computations displays scattering of current carriers due to the disordered regions in n-InP additional to lattice and impurity ions scattering.
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