There is strong experimental evidence for the existence of strange modes of failure of microelectromechanical systems (MEMS) devices under mechanical shock and impact. Such failures have not been explained with conventional models of MEMS. These failures are characterized by overlaps between moving microstructures and stationary electrodes, which cause electrical shorts. This work presents modeling and simulation of MEMS devices under the combination of shock loads and electrostatic actuation, which sheds light on the influence of these forces on the pull-in instability. Our results indicate that the reported strange failures can be attributed to early dynamic pull-in instability. The results show that the combination of a shock load and an electrostatic actuation makes the instability threshold much lower than the threshold predicted, considering the effect of shock alone or electrostatic actuation alone. In this work, a single-degree-of-freedom model is utilized to investigate the effect of the shock-electrostatic interaction on the response of MEMS devices. Then, a reduced-order model is used to demonstrate the effect of this interaction on MEMS devices employing cantilever and clamped-clamped microbeams. The results of the reduced-order model are verified by comparing with finite-element predictions. It is shown that the shock-electrostatic interaction can be used to design smart MEMS switches triggered at a predetermined level of shock and acceleration.

No abstract

No abstract

Squeeze film damping has a significant effect on the dynamic response of microelectromechanical system (MEMS) devices that employ perforated microstructures with large planar areas and small gap widths separating them from the substrate. Perforations can alter the effect of squeeze film damping by allowing the gas underneath the device to easily escape, thereby lowering damping. By decreasing the size of the holes, damping increases and the squeeze film damping effect increases. This can be used to minimize the out-of-plane motion of the microstructures toward the substrate, thereby minimizing the possibility of contact and stiction. This paper aims to explore the use of the squeeze film damping phenomenon as a way to mitigate shock and minimize the possibility of stiction and failure in this class of MEMS devices. As a case study, the performance of a G-sensor (threshold accelerometer) employed in an arming and fusing chip is investigated. The effect of changing the size of the perforation holes and the gap width separating the microstructure from the substrate are studied. A multiphysics finite-element model built using the software ANSYS is utilized for the fluidic and transient structural analysis. A squeeze film damping model, for both the air underneath the structure and the flow of the air through the perforations, is developed. Results are shown for various models of squeeze film damping assuming no holes, large holes, and assuming a finite pressure drop across the holes, which is the most accurate way of modeling. It is found that the threshold of shock that causes the G-sensor to contact the substrate has increased significantly when decreasing the holes size or the gap width, which is very promising to help mitigate stiction in this class of devices, thereby improving their reliability.

Squeeze film damping has a significant effect on the dynamic response of MEMS devices that employ perforated microstructures with large planar areas and small gap widths separating them from the substrate. Perforations can alter the effect of squeeze film damping by allowing the gas underneath the device to easily escape, thereby lowering the damping. By decreasing the size of the holes, the damping increases and the squeeze film damping effect increases. This can be used to minimize the out-of-plane motion of the microstructures toward the substrate, thereby minimizing the possibility of contact and stiction. This paper aims to explore the use of the squeeze-film damping phenomenon as a way to mitigate shock and minimize the possibility of stiction and failure in this class of MEMS devices. As a case study, we consider a G-sensor, which is a sort of a threshold accelerometer, employed in an arming and fusing chip. We study the effect of changing the size of the perforation holes and the gap width separating the microstructure from the substrate. We use a multi-physics finite-element model built using the software ANSYS. First, a modal analysis is conducted to calculate the out-of-plane natural frequency of the G-sensor. Then, a squeeze-film damping finite-element model, for both the air underneath the structure and the flow of the air through the perforations, is developed and utilized to estimate the damping coefficients for several hole sizes. Results are shown for various models of squeeze-film damping assuming no holes, large holes, and assuming a finite pressure drop across the holes, which is the most accurate way of modeling. The extracted damping coefficients are then used in a transient structural-shock analysis. Finally, the transient shock analysis is used to determine the shock loads that induce contacts between the G-sensor and the underlying substrate. It is found that the threshold of shock to contact the substrate has increased significantly when decreasing the holes size or the gap width, which is very promising to help mitigate stiction in this class of devices, thereby improving their reliability.