In this paper, a passive front end for a 3GPP Long Term Evolution (LTE) TDD transceiver comprising a microstrip antenna and filter is presented. The proposed antenna and filter operates in the LTE band 36 (TDD) which extends from 1930MHz to 1990MHz. A patch antenna and Hairpin filter is fabricated with a total area of 43x36mm 2 for the antenna and 38.6x32.16mm 2 for the filter. The proposed devices are fabricated using FR-4 material substrate and the measuring results show good agreement with the simulation results. The fabricated antenna has 2.67dBi directivity, 1.242dB gain, a minimum return loss of -31.85dB at resonant frequency 1950MHz and 150.3 MHz bandwidth at 6dB return loss, while the filter has -3dB BW of 90MHZ, a center frequency of 1950MHz and a fractional bandwidth of 4.615%.

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A compact, single-layer microstrip rectenna for dedicated far-field RF wireless power-harvesting applications is presented. The proposed rectenna circuit configurations including multiband triple L-Arms patch antenna with diamond slot ground are designed to resonate at 10, 13, 17, and 26 GHz with 10 dB impedance bandwidths of 0.67, 0.8, 2.45, and 4.3 GHz, respectively. Two rectifier designs have been fabricated and compared, a half wave rectifier with a shunted Schottky diode and a voltage doubler rectifier. The measured and simulated maximum conversion efficiencies of the rectifier using the shunted diode half-wave rectifier are 41%, and 34%, respectively, for 300 Ω load resistance, whereas they amount to 50% and 43%, respectively, for voltage doubler rectifier with 650 Ω load resistance. Compared to the shunted rectifier circuit, it is significant to note that the voltage doubler rectifier circuit has higher efficiency. Both rectifier’s circuits presented are tuned for a center frequency of 10 GHz and implemented using 0.81 mm thick Rogers (RO4003c) substrate. The overall size of the antenna is 16.5 × 16.5 mm2, and the shunted rectifier is only 13.3 × 8.2 mm2 and 19.7 × 7.4 mm2 for the voltage doubler rectifier. The antenna is designed and simulated using the CST Microwave Studio Suite (Computer Simulation Technology), while the complete rectenna is simulated using Agilent’s ADS tool with good agreement for both simulation and measurements.

This paper reported a pioneering 5G multiband microstrip line fed patch antenna for IoT, wireless power transfer (WPT) and data transmission. The proposed antenna is accomplished using a triple L-arms patch antenna responsible for the multiband response. A diamond-shaped ground slot is added to control and increase the bandwidth of the resonant frequency. The antenna is designed to resonate at 10, 13, 17 and 26 GHz with 10 dB impedance bandwidths of 0.67, 0.8, 2.45 and 4.3 GHz respectively. The proposed antenna is fabricated using microstrip technology with total area of 16.5x16.5 mm2. The 5G multiband antenna has sufficient realized gain of 4.95, 5.72, 4.94 and 7.077 dB respectively. The antenna is designed and simulated using the CST Microwave Studio Suite (Computer Simulation Technology). Measurements show good agreement with simulations in all frequencies of operation.

In this paper, the design, implementation and testing of the Zero IF receiver for Long Term Evolution (LTE) band 36 extending from 1930MHz to 1990MHz for TDD mode of transmission. Comprising a passive part and active part. The passive part consists of a microstrip patch antenna and a Hairpin BPF filter which are fabricated with a total area of 43x36mm 2 for the antenna and 38.6x32.16mm 2 for the filter. The proposed devices are fabricated using FR-4 material substrate with dielectric constant of Ɛr=4.4, thickens h =1.6, and Loss tangent of 0.025. The active part includes Low noise amplifier, IQ demodulator and frequency synthesizer. Which are a real made component selected off-shelf to satisfy the standards for LTE receiver characteristics. The proposed RF front-end receiver achieves a 4.022 dB NF, 2.65 dBm IIP3.