10 GHz Compact Shunt-Diode Rectifier Circuit Using Thin Film Ag/AZO Schottky Barrier Diode for Energy Harvesting Applications

Sadek, Dalia; Zekry, Abdelhalim; Shawkey, Heba; Kayed, Somaya

doi:10.1007/978-3-031-05014-5_36

Cited by 1 publication

(2 citation statements)

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“…A circular radiator fed by a 50 Ω transmission line is employed as a reference monopole antenna (1). The circular radiator width W o and length L o are calculated with the help of the theory of transmission lines [ 27 , 28 ].…”

Section: Antenna Designmentioning

confidence: 99%

“…Multiple printed electronics techniques [ 21 , 22 ] allow for the simplified synthesis of planar Schottky diodes (PSDs) in PCB technology. Among the large number of metal oxide semiconductor materials, ZnO arises due to its wide bandgap, good chemical and thermal stability, and high mobility, with high operation frequencies that allow its usage for wideband applications [ 23 , 24 , 25 , 26 , 27 , 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

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Multiband Microstrip Rectenna Using ZnO-Based Planar Schottky Diode for RF Energy Harvesting Applications

et al. 2023

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This paper presents a single-substrate microstrip rectenna for dedicated radio frequency energy harvesting applications. The proposed configuration of the rectenna circuit is composed of a clipart moon-shaped cut in order to improve the antenna impedance bandwidth. The curvature of the ground plane is modified with a simple U-shaped slot etched into it to improve the antenna bandwidth by changing the current distribution; therefore, this affects the inductance and capacitance embedded into the ground plane. The linear polarized ultra-wide bandwidth (UWB) antenna is achieved by using 50 Ω microstrip line and build on Roger 3003 substrate with an area of 32 × 31 mm2. The operating bandwidth of the proposed UWB antenna extended from 3 GHz to 25 GHz at −6 dB reflection coefficient (VSWR ≤ 3) and extended from both 3.5 to 12 GHz, from 16 up to 22 GHz at −10 dB impedance bandwidth (VSWR ≤ 2). This was used to harvest RF energy from most of the wireless communication bands. In addition, the proposed antenna integrates with the rectifier circuit to create the rectenna system. Moreover, to implement the shunt half-wave rectifier (SHWR) circuit, a planar Ag/ZnO Schottky diode uses a diode area of 1 × 1 mm2. The proposed diode is investigated and designed, and its S-parameter is measured for use in the circuit rectifier design. The proposed rectifier has a total area of 40 × 9 mm2 and operates at different resonant frequencies, namely 3.5 GHz, 6 GHz, 8 GHz, 10 GHz and 18 GHz, with a good agreement between simulation and measurement. The maximum measured output DC voltage of the rectenna circuit is 600 mV with a maximum measured efficiency of 25% at 3.5 GHz, with an input power level of 0 dBm at a rectifier load of 300 Ω.

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Section: Antenna Designmentioning

confidence: 99%