No abstract

No abstract

Articles you may be interested inEffective mobility characteristics of platinum-silicided p -type Schottky barrier metal-oxide-semiconductor fieldeffect transistor J. Vac. Sci. Technol. B 28, 799 (2010); 10.1116/1.3457936 Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k /metal-gate p -type metal oxide semiconductor field effect transistors Thermoreflectance microscopy applied to the study of electrostatic discharge degradation in metal-oxidesemiconductor field-effect transistors Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors J. Appl. Phys. 92, 937 (2002); 10.1063/1.1486022Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistorThe dc characteristics degradation of 0.18 m metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ after 10 MeV proton irradiation is comprehensively investigated in this paper. The measured results show that the off-state drain current is increased in N-channel MOSFETs, which is due to the turn on of the parasitic transistors induced by the shallow trench isolation regions. While in P-channel MOSFETs, the threshold voltage increase ͑absolute value͒, the transconductance degradation, and the saturation drain current decrease are observed. From the analysis, it is concluded that the basic damage mechanism is not ascribed to the gate oxide and the isolation region. The origin of the observed changes may be mainly due to the damage in the spacer oxides of the transistors. In order to verify the assumption, the leakage current passing through the spacer between the gate and the drain is measured before and after irradiation with floated source/ substrate and grounded drain. We find that the leakage current is two to three times larger after irradiation. Finally, in order to confirm the extrapolation, 2-dimension ͑2D͒ simulation has been performed with Synopsys TCAD ͑technical computer-aided design͒ Sentaurus Device Simulation tools ͑ISE 10.0͒. The behavior of the simulated charges trapped in the spacers is qualitatively consistent with the experimental results.

No abstract

No abstract

No abstract

The embedded discrete fracture model (EDFM), among different flow simulation models, achieves a good balance between efficiency and accuracy. In the EDFM, micro-scale fractures that cannot be characterized individually need to be homogenized into the matrix, which may bring anisotropy into the matrix. However, the simplified matrix–fracture fluid exchange assumption makes it difficult for EDFM to address the anisotropic flow. In this paper, an integrally embedded discrete fracture model (iEDFM) suitable for anisotropic formations is proposed. Structured mesh is employed for the anisotropic matrix, and the fracture element, which consists of a group of connected fractures, is integrally embedded in the matrix grid. An analytic pressure distribution is derived for the point source in anisotropic formation expressed by permeability tensor, and applied to the matrix–fracture transmissibility calculation. Two case studies were conducted and compared with the analytic solution or fine grid result to demonstrate the advantage and applicability of iEDFM to address anisotropic formation. In addition, a two-phase flow example with a reported dataset was studied to analyze the effect of the matrix anisotropy on the simulation result, which also showed the feasibility of iEDFM to address anisotropic formation with complex fracture networks.

No abstract