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This letter reports on the fabrication and investigation of ferroelectric epitaxial Pb(Zr,Ti)O3(PZT)∕Pt films on Si substrates using epitaxial γ-Al2O3 buffer layer for Si integrated ferroelectric devices. (001) and (111) epitaxial γ-Al2O3 films were grown on Si(001) and Si(111) substrates, respectively, using chemical vapor deposition. PZT films with various compositions were epitaxially grown on epitaxial Pt coated substrates using a sol-gel method. Epitaxial PZT films exhibited better ferroelectric and pyroelectric properties than polycrystalline PZT films. In particular, maximum pyroelectric coefficients of the epitaxial films were obtained, with values of 1.8×10−8C∕cm2K for the PZT(001) film with a Zr∕Ti ratio of 40∕60 and 1.4×10−8C∕cm2K for the PZT(111) film with a Zr∕Ti ratio of 52∕48.

Articles you may be interested inElectric field modulation of magnetism and electric properties in La-Ca-MnO3/Pb(Zr0.52Ti0.48)O3 magnetoelectric laminate J. Appl. Phys. 113, 17C712 (2013); 10.1063/1.4795871 Erratum: Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates [Appl. Phys. Lett.90, 232908 (2007)] Appl. Phys. Lett. 91, 069901 (2007); 10.1063/1.2767970 Structure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process J. Appl. Phys. 98, 034104 (2005); 10.1063/1.1999834 Self-biased dielectric bolometer from epitaxially grown Pb(Zr,Ti)O 3 and lanthanum-doped Pb(Zr,Ti)O 3 multilayered thin filmsPb͑Zr 0.4 Ti 0.6 ͒O 3 thin films with a thickness of 500 nm were spin coated on ͑110͒ preferred Pt bottom electrodes using a sol-gel method, in which the ͑110͒ preferred Pt bottom electrode was developed by using a ͑100͒-oriented conductive oxide electrode LaNiO 3 film as an adhesion layer on a SiO 2 /Si substrate. X-ray diffraction analysis and field emission scanning electron microscopy show that the as-grown Pb͑Zr 0.4 Ti 0.6 ͒O 3 films are highly ͑110͒-oriented with a columnar structure. It indicates that the ͑110͒ preferred Pt bottom electrode is effective for growing highly ͑110͒-oriented Pb͑Zr 0.4 Ti 0.6 ͒O 3 films. The as-grown Pb͑Zr 0.4 Ti 0.6 ͒O 3 films show excellent dielectric and ferroelectric properties with dielectric constant 33 T / 0 = 1620, loss tangent tan ␦ = 2.1%, spontaneous polarization 2P s = 158 C/cm 2 , and remnant polarization 2P r =92 C/cm 2 . Excellent pyroelectric properties are also detected in the ͑110͒-oriented films. At room temperature, the pyroelectric coefficient and the figure of merit for detectivity can reach up to 7.8ϫ 10 −4 C m −2 K −1 and 1.79 ϫ 10 −5 Pa −0.5 , respectively.

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