Ferroelectric and pyroelectric properties of (Na0.5Bi0.5)TiO3–BaTiO3 based trilayered thin films

Ferro-piezoelectric properties of 0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3 thin film prepared by metal–organic decomposition

“…4(a). The P-E loops are not fully saturated under high electric field, and they are consistent with the P-E loops of the previous NBT-BT6 thin films [15,29]. The localized oxygen vacancies trapped at grain boundaries can pin domains and result in large leakage current and polarization degradation [30].…”

The crystallization and dielectric tunability of Zn doped Na0.5Bi0.5TiO3 thin films

“…However, for the thin film form, it suffers the drawback of the serious leakage problem, which is caused by the high volatility of A-site elements and partial valance transfer of B-site element during the annealing process [6]. Until now, several approaches have been focus on improving the insulating property of the NBT-based thin films, such as optimization of growth conditions [7], construction of multilayer structure [8], and site-engineering [9,10]. Among these methods, ion substitution is an easy and effective way to reduce the leakage current.…”

Influence of annealing temperature on the microstructure, leakage current and dielectric properties of Na0.5Bi0.5(Ti,Zn)O3 thin films

“…However, the high conductivity has hindered its use from widespread applications. To overcome the disadvantage and improve the electrical properties of the NBT system, a lot of modifications, such as the usage of buffer layer, the control of orientation, the formation of multilayered structure and the forming of solid solution with other component have been taken [13][14][15][16]. Besides, site engineering is considered to be another available way to improve the electrical properties of NBT film.…”