Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N2 + Ar) plasma. Si oxynitride, probably Si\SubtN\SubtO, was grown only when Ar was mixed with N2, while SiO\Subt was solely formed with N2 only. At the top surface of the grown film with mixed gas, SiO\Subt was always grown due to residual oxygen in N2 gas, so that the SiO\Subt/Si\Subt N2O structure was always obtained. Good capacitance-voltage characteristics were obtained although the growth rate was somewhat low. The ( N2 + Ar) plasma treatment after deposition of Si\SubsN\Subf powder on Si was also discussed.
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