Electrical conduction data from undoped low-pressure chemically vapor deposited polycrystalline silicon thin films at room temperature and above are presented. The physical mechanisms pertinent to general current-voltage characteristics are experimentally interrogated from three different viewpoints. In the nonlinear current-voltage region, the sheet resistance Rs is shown to vary drastically depending on the device aspect ratio for given applied electrical field Ē. The nonscalability of Rs with respect to Ē, the temperature behavior of Rs, and the photoconductivity data indicate that the nonlinear current-voltage behavior cannot be attributed to field-enhanced conductivity. Other possible mechanisms responsible for observed nonlinearity are discussed.
The performance of MOSFET's fabricated in LPCVD polysilicon thin films and operating in accumulation mode is modeled analytically. The model quantitatively explains reported device characteristics. Specifically, measured temperature coefficient of current, drive and leakage current, transconductance, drain admittance and ON/OFF current ratio are described in terms of inherent structural and electronic properties of polysilicon. The role of grain boundary hydrogenation in effectino the device performance is highliohted and ouantified.
Electrical conduction in undoped LPCVD polycrystalline silicon was examinated at both low and high fields. The physical mechanisms pertinent to the current-voltage (I–V) characteristics were experimentally interrogated. Specially, the localized self heating near grain boundaries that is responsible for nonlinear I–V behavior was further corroborated by the temperature dependence of the resistivity and the high-feld I–V behavior. These data were quantified, based on local Joule heating and a concomitant rise in the sample temperature.
The n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.
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