No abstract

This research proposes an application of generative adversarial networks (GANs) to solve the class imbalance problem in the fault detection and classification study of a plasma etching process. Small changes in the equipment part condition of the plasma equipment may cause an equipment fault, resulting in a process anomaly. Thus, fault detection in the semiconductor process is essential for success in advanced process control. Two datasets that assume faults of the mass flow controller (MFC) in equipment components were acquired using optical emission spectroscopy (OES) in the plasma etching process of a silicon trench: The abnormal process changed by the MFC is assumed to be faults, and the minority class of Case 1 is the normal class, and that of Case 2 is the abnormal class. In each case, additional minority class data were generated using GANs to compensate for the degradation of model training due to class-imbalanced data. Comparisons of five existing fault detection algorithms with the augmented datasets showed improved modeling performances. Generating a dataset for the minority group using GANs is beneficial for class imbalance problems of OES datasets in fault detection for the semiconductor plasma equipment.

Plasma-based semiconductor processing is highly sensitive, thus even minor changes in the procedure can have serious consequences. The monitoring and classification of these equipment anomalies can be performed using fault detection and classification (FDC). However, class imbalance in semiconductor process data poses a significant obstacle to the introduction of FDC into semiconductor equipment. Overfitting can occur in machine learning due to the diversity and imbalance of datasets for normal and abnormal. In this study, we suggest a suitable preprocessing method to address the issue of class imbalance in semiconductor process data. We compare existing oversampling models to reduce class imbalance, and then we suggest an appropriate sampling strategy. In order to improve the FC performance of plasma-based semiconductor process data, it was confirmed that the SMOTE-based model using an undersampling technique such as Tomek link is effective. SMOTE-TOMEK, which removes multiple classes and makes the boundary clear, is suitable for FDC to classify minute changes in plasma-based semiconductor equipment data.