A method to obtain long lengths of flexible, biaxially oriented substrates with smooth, chemically compatible surfaces for epitaxial growth of high-temperature superconductors is reported. The technique uses well established, industrially scalable, thermomechanical processes to impart a strong biaxial texture to a base metal. This is followed by vapor deposition of epitaxial buffer layers (metal and/or ceramic) to yield chemically compatible surfaces. Epitaxial YBa2Cu3Ox films grown on such substrates have critical current densities exceeding 105 A/cm2 at 77 K in zero field and have field dependencies similar to epitaxial films on single crystal ceramic substrates. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high-Jc wire capable of carrying high currents in high magnetic fields and at elevated temperatures.

Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low-power, high speed memory, logic and photonic devices based on spintronics. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. We discuss the current state-of-the-art in producing room temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications.

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▪ Abstract  The field of high-temperature superconducting thin films is reviewed, focusing on the synthesis and properties of materials that are most promising for device applications. Current materials issues that are important for emerging device applications of oxide superconducting films are discussed, with emphasis on the growth, characterization, and use of epitaxial films. The status of specific superconducting device technologies is briefly reviewed.

Residual compressive stress due to plume-induced energetic particle bombardment in CeO2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed.

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