2001
DOI: 10.1016/s0921-4534(01)00437-3
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Recent progress in the fabrication of high-Jc tapes by epitaxial deposition of YBCO on RABiTS

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Cited by 105 publications
(36 citation statements)
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“…These advancements have been made primarily using Ni or Ni-alloy substrates, especially Ni-W [2][3][4]. An attractive alternative to Ni-based substrates may be Cu-based substrates since copper is six times cheaper than nickel on a kilogram per kilogram basis.…”
Section: Introductionmentioning
confidence: 99%
“…These advancements have been made primarily using Ni or Ni-alloy substrates, especially Ni-W [2][3][4]. An attractive alternative to Ni-based substrates may be Cu-based substrates since copper is six times cheaper than nickel on a kilogram per kilogram basis.…”
Section: Introductionmentioning
confidence: 99%
“…A strong [100] cube texture is introduced into the substrate by conventional rolling and recrystallization. Although the RABiTS approach was developed initially with pure nickel [72], substrate materials with more robust mechanical properties and reduced magnetism, notably nickel with 5 atomic % tungsten, have now replaced pure Ni and achieved FWHM below 5 [73].…”
Section: Ybco-coated Conductorsmentioning
confidence: 99%
“…Coated conductors are mainly composed of a textured substrate, a buffer layer, and a superconducting layer. So far, there are two practical routes to obtain textured substrates: rolling assisted biaxially textures (RABiTS) [2,3] and ion beam assisted deposition (IBAD) [4][5][6]. Ni-based alloy tape with yttrium-stabilized zirconia (YSZ) seed layer deposited via an IBAD route (named IBAD-YSZ tape) is a textured substrate suited for coated conductors [6].…”
Section: Introductionmentioning
confidence: 99%
“…The growth of the buffer layer prepared via CSD methods with traditional materials should be achieved at a relatively high sintering temperature of 900-1150 • C because of their high melting point [9]. In order to lower the sintering temperature of the buffer layer for coated conductors in CSD processing, a class of new buffer materials, REBiO 3 (RE correspond to a rare earth element), were developed, and their physical and chemical property were systematically characterized [11,12]. A REBiO 3 buffer layer can be epitaxially grown at a relatively low temperature of around 700-900 • C [12][13][14][15][16][17] because of its low formation temperature.…”
Section: Introductionmentioning
confidence: 99%
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