The conditions for the production of rectifying anisotyped heterostructures ZnO:Al/p-Cd 1-x Zn x Te by the method of RF-magnetron sputtering of ZnO:Al films onto crystalline substrates p-Cd 1-x Zn x Te were investigated. High energy parameters of the barrier were realized by preliminary heat treatment of the substrates. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V-characteristics. Based on the researches of C-V-characteristics, the interconnection between physical processes during heat treatment was established, which makes possible to avoid the negative influence of the differences between crystalline materials lattices on the heterojunctions. Suggested models of energy diagrams of the manufactured heterostructures are well describe experimental electrophysical phenomena.

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The conditions for obtaining diode heterostructures of MnS/n-CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n-CdZnTe crystalline substrates were investigated. Based on the analysis of the temperature dependences of the I-V-characteristics, the mechanisms of the influence of electronic processes on the forward current in the MnS film are established. The mechanisms of current flow at reverse bias are revealed. The conditions for the formation of the energy barrier at the MnS/n-CdZnTe heterojunction and the influence on its parameters of the energy states at the semiconductor interface are studied. Based on the C-V-characteristics, the peculiarities of the distribution of electrically active impurities in the base region are investigated and the interaction of the alabandite film capacitance with the diffusion capacitance of the heterostructure is revealed. The proposed model of the energy diagram of the heterostructure well describes the experimental results.

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Researches of I–V-characteristics and C-V-characteristics of structures fabricated on unannealed and annealed at high temperature (t = 900 °C) p-Cd1−xZnxTe substrates have been carried out. The influence of the intrinsic point defects system of the base material p-Cd1−xZnxTe on the interface properties of ZnO:Al/n-CdS/p-Cd1−xZnxTe heterojunctions have been studied. The above structures have been fabricated by sequential deposition of CdS and ZnO:Al thin films on crystalline p-Cd1−xZnxTe by high-frequency magnetron sputtering. Based on the analysis of the I–V-characteristics in the region of forward and reverse biases, the relationship between the physical processes during heat treatment and the structural perfection of the transition area of the studied heterojunctions have been established.