Modification of the properties of tin sulfide films grown by spray pyrolysis

Orletskii, I. G.; Maryanchuk, P. D.; Майструк, Э. В.; Solovan, M. N.; Koziarskyi, D. P.; Брус, В. В.

doi:10.1134/s0020168516080148

Cited by 12 publications

(6 citation statements)

References 14 publications

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“…The obtained experimental value = 0.7 eV (at = 290 K) was used to put in agreement the energy parameters of a band diagram constructed on the basis of the Anderson model for heterojunctions [23] and the real energy profile in the -SnS 2 / -Cd 1− Zn Te heterostructure. In so doing, the literature data on the electron affinity, = 4.9 eV for SnS 2 [3] and = 4.28 eV for CdZnTe [12], as well as the forbidden gap width, = 1.53 eV for CdZnTe [24] and = 2.4 eV for spray-pyrolysis SnS 2 thin films [16], were applied. The positions of the Fermi level in the forbidden bands with respect to the bottom of the SnS 2 conduction band ( 1 = 0.1 eV) and the top of the -Cd 1− Zn Te valence band ( 2 = 0.26 eV) were determined from the expressions for the equilibrium charge carrier concentration [25].…”

Section: Results and Their Discussionmentioning

confidence: 99%

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Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Оrletskyi¹,

Ілащук²,

Майструк³

et al. 2019

Ukr. J. Phys.

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Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.

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Section: Results and Their Discussionmentioning

confidence: 99%

“…The application of Cd 1− Zn Te makes the production of high-quality heterojunctions more feasible. The choice of the spray-pyrolysis method for depositing SnS 2 films onto the Cd 1− Zn Te surface is related to its low cost and successful application when fabricating the films of metal sulfides [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Оrletskyi¹,

Ілащук²,

Майструк³

et al. 2019

Ukr. J. Phys.

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“…where R is the reflection coefficient, α is the absorption coefficient of electromagnetic radiation. The absorption coefficient α was calculated using the formula (2) [27][28][29] with a film thickness of n-Fe 2 O 3 w=0.3 μm and a reflection coefficient R≈12%, which is typical for hematite produced by spray-pyrolysis [17].…”

Section: Resultsmentioning

confidence: 99%

Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe₂O₃/n-CdTe

Koziarskyi¹,

Майструк²,

Orletsky³

et al. 2020

Semicond. Sci. Technol.

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Conditions for the production of straightening isotype heterostructures n-Fe 2 O 3 /n-CdTe by spray-pyrolysis of thin films of hematite n-Fe 2 O 3 onto n-CdTe crystalline substrates were investigated. The presence of tunneling and space charge limits of the mechanisms of motion of electrons in the forward and reverse currents through the energy barrier of the heterojunction is established on the basis of the analysis of temperature dependences of I-V-characteristics. The role of energy states at the boundary of n-Fe 2 O 3 /n-CdTe in the formation of barrier parameters is determined. On the basis of the C-V-characteristics, the manifestation of the dielectric properties of the hematite film in a wide range of voltages is investigated. A model of the energy diagram of the heterostructure, which describes the experimental electrophysical phenomena well, has been proposed.

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“…Встановлено, що коефіцієнт поглинання (рис. 12) тонких плівок CuO в області власного поглинання добре описується залежністю (9). Така залежність свідчить про те, що матеріал тонких плівок CuO, напилених методом реактивного магнетронного розпилення при постійній напрузі, є прямозонним напівпровідником.…”

Section: експериментальна частинаunclassified

“…Тонкі плівки CuO створюють з використанням різних методів осадження тонких плівок [9,10], таких як хімічне осадження з парової фази, термічне випаровування, реактивне магнетронне розпилення. Однак електричні та оптичні властивості даних плівок суттєво залежать від технологічних режимів їх виготовлення.…”

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Structural, Electrical and Optical Properties of CuO Thin Films Obtained by Reactive Magnetron Sputtering

Kuryshchuk

Kovalyuk

Parkhomenko

et al. 2021

EEJP

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CuO thin films were produced by the method of reactive magnetron sputtering at direct current in a universal vacuum system Leybold-Heraeus L560 on glass substrates, the temperature of which was: 300 K and 523 K. The structural, electrical and optical properties for the obtained samples of CuO thin films were studied, namely: elemental composition, distribution of elements on the surface, which are part of these films, grain size, activation energy, optical band gap, refractive index, analysis of curves of transmission and reflection spectra for CuO thin films deposited on glass substrates. The elemental composition of the thin films and the surface morphology were performed using a scanning electron microscope (MIRA3 FEG, Tescan) equipped with a reflected electron detector (BSE) and an energy-dispersed X-ray detector (EDX). It was found that the grain size for films obtained at a lower substrate temperature D is ~ 16 nm, and for films obtained at a higher temperature - D ~ 26 nm. On the diffractograms of CuO thin films, a higher peak intensity is observed for thin films obtained at higher CuO no. 2 substrate temperatures, which may be due to better structural perfection of thin films and larger grain size. From the study of electrical properties, it was found that the temperature dependences of the electrical resistance for CuO thin films have a semiconductor character, ie the resistance decreases with increasing T. The surface resistance of the films was measured by the four-probe method: no. 1- ρ = 18,69 kΩ/¨, sample no. 2 – ρ = 5,96 kΩ/¨. Based on independent measurements of the reflection and transmission coefficients, the optical band gap was determined for the two samples by extrapolation of the rectilinear section of the curve (αhν)2 = f (hv) to the hv axis. For the sample CuO №1 Egop = 1.62 eV; for the sample CuO no. 2 Egop = 1.65 eV. For CuO no. 2 thin films, the envelope method was also used to determine the basic optical coefficients Egop = 1.72 eV, and the obtained Egop values determined by the two methods correlate well with each other.

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Modification of the properties of tin sulfide films grown by spray pyrolysis

Cited by 12 publications

References 14 publications

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe₂O₃/n-CdTe

Structural, Electrical and Optical Properties of CuO Thin Films Obtained by Reactive Magnetron Sputtering

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Modification of the properties of tin sulfide films grown by spray pyrolysis

Cited by 12 publications

References 14 publications

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe2O3/n-CdTe

Structural, Electrical and Optical Properties of CuO Thin Films Obtained by Reactive Magnetron Sputtering

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Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe₂O₃/n-CdTe