Influence of properties of hematite films on electrical characteristics of isotype heterojunctions Fe₂O₃/n-CdTe

Abstract

Conditions for the production of straightening isotype heterostructures n-Fe 2 O 3 /n-CdTe by spray-pyrolysis of thin films of hematite n-Fe 2 O 3 onto n-CdTe crystalline substrates were investigated. The presence of tunneling and space charge limits of the mechanisms of motion of electrons in the forward and reverse currents through the energy barrier of the heterojunction is established on the basis of the analysis of temperature dependences of I-V-characteristics. The role of energy states at the boundary of n-Fe 2 O 3 /n-CdTe in the formation of barrier parameters is determined. On the basis of the C-V-characteristics, the manifestation of the dielectric properties of the hematite film in a wide range of voltages is investigated. A model of the energy diagram of the heterostructure, which describes the experimental electrophysical phenomena well, has been proposed.

Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

“…When depositing oxide films on substrates made of CdTe [15,16] and solid Cd 1− Zn Te solutions [17,18], high-quality diode structures are created. This circumstance initiated us to perform an experiment aimed at the fabrication of a heterostructure based on the -Mn 2 O 3 / -CdZnTe heterojunction and the study of its electrical and photoelectric properties.…”

“…That is why they were selected as substrates for growing -Mn 2 O 3 films. The choice of the spray pyrolysis method for the fabrication of thin -Mn 2 O 3 films was associated with its low cost and with the successful results obtained while manufacturing -Fe 2 O 3 films [15].…”