Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

Оrletskyi, Ivan G.; Ілащук, М. І.; Майструк, Э. В.; Parkhomenko, Hryhorii P.; Maryanchuk, P. D.

doi:10.15407/ujpe66.9.792

Cited by 2 publications

(3 citation statements)

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“…The electron affinity energy of Mn2O3   4.45 eV determined by the Kelvin method [13] was used, which is characteristic of Mn2O3 films produced by the spray pyrolysis method. The used value of the band gap Eg(Mn2O3)  2.12 eV, which is obtained from optical studies of Mn2O3 films, was tested when constructing the energy diagram of n-Mn2O3/n-CdZnTe heterojunctions [10]. The depth of the Fermi level 1  EC -EF  0.41 eV in the band gap of n-Mn2O3 was calculated using the expression for non-degenerate semiconductors [18]:…”

Section: Resultsmentioning

confidence: 99%

“…This material is non-toxic and cost-effective. As a manganese oxide semiconductor, heterojunctions with g-C3N4 [7], СuOx [8], Fe2O3/Mn2O3 [9], n-Mn2O3/n-CdZnTe [10] are used. Thin films of Mn2O3 with a band gap Eg  2.01÷2.4 eV [11,12] are promising as a frontal material for heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

“…Taking into account the successful application of the method for creating heterojunctions based on indium selenide and heterostructures using manganese oxide [4,10,16], the purpose of the study was to manufacture and study the photovoltaic properties of n-Mn2O3/ p-InSe heterojunctions. We have already produced photosensitive heterojunctions based on the contact of Mn2O3 with n-InSe, which show good rectifying properties [4].…”

Section: Introductionmentioning

confidence: 99%

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Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

Orletskii,

Tkachuk,

Ivanov

et al. 2023

J. Nano- Electron. Phys.

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The conditions of application of thin semiconductor Mn2O3 films on p-InSe crystalline layered semiconductor substrates at a temperature of 623 K by the spray-pyrolysis method to create anisotypic heterojunctions n-Mn2O3/p-InSe were investigated. InSe is a promising material for photoelectronics. The use of the Mn2O3 film, which is transparent in the region of maximum photosensitivity of InSe, makes it possible to effectively exploit the optical properties of InSe in the fabrication of various semiconductor devices. The advantage of using layered semiconductors in the production of heterojunctions is that high-quality interfaces are obtained even with a significant discrepancy in the parameters of the crystal lattices of the starting materials. This significantly expands the choice of heterojunction materials. Electrical and photoelectric parameters of n-Mn2O3/p-InSe heterojunctions were measured and theoretical models describing them were proposed. The graphical dependencies of I-V characteristics, series resistance, height of the potential barrier and photosensitivity are constructed. It was established that these heterojunctions are photosensitive and have rectifying properties. Using the energy parameters of the starting materials, an energy diagram of the heterojunction was constructed, which allows for the analysis of physical processes in the obtained heterojunctions. Based on the temperature dependence of both direct and reverse I-V characteristics, the dynamics of changes in the energy parameters of the heterojunction with temperature, as well as the mechanisms of current flow through the heterojunction, are established. The spectral photosensitivity of the heterojunction was analyzed.

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Section: Resultsmentioning

confidence: 99%