Quantum confinement and magnetic field effects on the electron Landé g factor in GaAs-(Ga,Al)As double quantum wells AIP Conf.Electron Landé g factor in GaAs-(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting J. Appl. Phys.Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited) Abstract. The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. Magneto bound polaron in a GaMnAs/Ga 0.6 Al 0.4 As quantum dot is investigated with the inclusion of exchange interaction effects due to Mn alloy content and the geometrical confinement. The spin polaronic energy of the heavy hole exciton is studied with the spatial confinement using a mean field theory in the presence of magnetic field strength.
Magnetic field induced hydrogenic donor binding energy as a function of dot radius in a GaMnAs/Ga 0.4 Al 0.6 As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier. Calculations are performed by varying its dot radius, for various Mn incorporation in GaMnAs material within a single band effective mass approximation using variational method. The spin polaronic energy of donor impurity for different Mn 2+ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength. The effective g-factor of conduction band electron with the geometrical confinement is computed in the influence of magnetic field. The exchange coupling constant is calculated for various magnetic field. The results show that the s-d exchange interaction in the GaMnAs/Ga 0.4 Al 0.6 As quantum dot has a strong dependence on spatial confinement and the Mn alloy content. The magnetic confinement is dominant for larger dot sizes whereas the Mn alloy content has more pronounced for the smaller dots. The g-factor of conduction band electrons is considerably different from the free electron value. Our results are in good agreement with the other investigators.
Magneto bound exciton and the charged exciton in a GaMn 0.02 As / Ga 0.6 Al 0.4 As quantum dot are reported with the spatial confinement effect. The numerical calculations are carried out with the inclusion of exchange interaction between the carrier and the magnetic impurities. The binding energies of exciton and the trions and the optical transition energy are obtained as a function of dot radius. Numerical computations are followed using exact diagonalization method. The spin polaronic energy of the exciton and the charged excitons are obtained using a mean field theory in the presence of magnetic field strength. The magnetization of Mn ion impurities as a function of dot radius is investigated. The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. The magnetic field induced size dependence of effective Landé g-factor is computed. The result shows that (i) the geometrical dependence on sp-d exchange interaction in the GaMn 0.02 As / Ga 0.6 Al 0.4 As quantum dot has great influence with the geometrical confinement, (ii) the monotonic behavior of effective g-factor with the reduction of dot radius is observed, (iii) the Landé factor is more sensitive if the geometrical confinement effect is included and (iv) the value of effective g-factor increases when the spatial confinement is enhanced for all the dot radii. Our results show that the effective Landé g-factor can be manipulated negative to positive values in the GaMn 0.02 As / Ga 0.4 Al 0.6 As quantum dot.
Binding energies of biexciton are computed in a GaMnAs / GaAlAs quantum dot with the effects of geometrical confinement, exchange interaction between the charge carrier and the magnetic impurities and the magnetic field. The size dependence of the binding energy of the biexciton in the presence of magnetic field is brought out. The optical transition energy, in the presence of magnetic field strength, is discussed for various magnetic impurities in a GaMn x As quantum dot. Numerical calculations are performed using variational technique. The spin polaronic energy of the biexciton with the effect of spatial confinement is carried out taking into account the mean field approximation in the presence of magnetic field strength. The magnetization of magnetic ion impurities as a function of dot radius is computed in a GaMn 0.02 As quantum dot. The effective g-factor as a function of spatial confinement is found in the GaMnAs quantum dot. The results show that the shift in spin polaron has more influence for the larger dot radius and the nonlinearity to linear behavior of g-factor for a particular dot size is achieved due to the sign reversal of Zeeman splitting.
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