Effective Landé factor in a GaMnAs quantum dot; with the effects of sp-d exchange on a bound polaron

Abstract

Quantum confinement and magnetic field effects on the electron Landé g factor in GaAs-(Ga,Al)As double quantum wells AIP Conf.Electron Landé g factor in GaAs-(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting J. Appl. Phys.Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited) Abstract. The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. Magneto bound polaron in a GaMnAs/Ga 0.6 Al 0.4 As quantum dot is investigated with the inclusion of exchange interaction effects due to Mn alloy content and the geometrical confinement. The spin polaronic energy of the heavy hole exciton is studied with the spatial confinement using a mean field theory in the presence of magnetic field strength.