No abstract

We report the spontaneous formation of superconducting NiBi3 phase in thermally evaporated Ni-Bi bilayer films. High reaction-diffusion coefficient of Bi is believed to drive the formation of NiBi3 during the deposition of Bi on the Ni film. Cross sectional transmission electron microscopy and glancing incidence X-ray depth profiling confirmed the presence of NiBi3 throughout the top Bi layer. Superconducting transition at ∼3.9 K, close to the bulk value, was confirmed by transport and magnetization measurements. The bilayers were irradiated with varying fluence of 100 MeV Au ions to study the robustness of superconducting order in presence of large concentration of defects. Superconducting parameters of NiBi3, such as transition temperature and upper critical field, remained unchanged upto an ion dose of 1 × 1014 ions/cm2. The diffusive formation of NiBi3 in Ni opens the possibility of studying superconducting proximity effect at a truly clean superconductor-ferromagnet interface.

We report the synthesis of ZnS and ZnS:Cu (copper doped ZnS) quantum dots by chemical method at room temperature. In this technique ZnS and ZnS:Cu quantum dots are produced by simple chemical reactions where zeolite acts as matrix and plays the key role in controlling particle growth during synthesis. ZnS exhibits luminescence properties such as Zn2+ related emission. ZnS:Cu possesses Cu related emission, efficient low voltage electroluminescence, and super linear voltage-brightness electroluminescence characteristics. This study demonstrates the technological importance of semiconductor quantum dots prepared by low cost chemical route.

This work is driven by the vision of engineering planar field emitters with ferromagnetic metal-insulator nanocomposite thin films, using swift heavy ion (SHI) irradiation method. FeCo nanoparticles inside SiO2 matrix, when subjected to SHI get elongated. Using this, we demonstrate here a planar field emitter with maximum current density of 550 μA/cm(2) at an applied field of 15 V/μm. The film, irradiated with 5 × 10(13) ions/cm(2) fluence (5e13) of 120 MeV Au(9+) ions, shows very high electron emitting quantum efficiency in comparison to its unirradiated counterpart. Surface enhanced Raman spectroscopy analysis of unirradiated and 5e13 films further confirms that the field emission (FE) enhancement is not only due to surface protrusions but also depends on the properties of entire matrix. We find experimental evidence of enhanced valence band density of states (VB DOS) for 5e13 film from XPS, which is verified in the electronic structure of a model FeCo cluster from first-principles based calculations combining density functional theory (DFT) and molecular dynamics (MD) simulations. The MD temperature is selected from the lattice temperature profile inside nanoparticles as deduced from thermal spike model. Increasing the irradiation fluence beyond 5e13, results in reduced VB DOS and melting of surface protrusions, thus causing reduction of FE current density. We finally conclude from theoretical analysis that change in fluence alters the co-ordination chemistry followed by the charge distribution and spin alignment, which influence the VB DOS and concurrent FE as evident from our experiment.

We have investigated magnetic properties of MgO single crystals doped with Ni and Co impurities, and studied changes in magnetic properties after heavy ion irradiation. These results are compared with doped single-crystal thin films that contain a higher concentration of trapped defects. The as-grown bulk single crystals, which contain a small equilibrium concentration of vacancies, exhibit a perfect paramagnetic behavior throughout the temperature range and magnetic field. By introducing defects either by ion irradiation or by thin film deposition, which have trapped defects, we are able to achieve defect-mediated ferromagnetic ordering.