Active imaging experiments are described in the 300 microm-l mm-region of the far infrared (FIR) spectrum. Transmission data are presented for a wide variety of common materials indicating the range of applicability of FIR imaging to law enforcement or nondestructive testing. The FIR images of several objects are presented, and the practicality of FIR imaging is discussed in light of straightforward improvements that can be made in the simple imaging system employed in these studies.

Imaging experiments in the far infrared are described. Transmission data are presented for several common media. Far infrared pictures of metallic objects are presented. The practicality of a far infrared imaging system is discussed.

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Epitaxial regrowth of deposited amorphous silicon has been previously described utilizing ion implantation amorphization, ion mixing and thermal anneal. This paper evaluates the effects of these process steps on crystalline quality utilizing Rutherford Backscattering (RBS), x-ray diffraction rocking curves and Raman scattering.In situ (during implantation) regrowth results in defective crystallinity. In contrast, when there is no in situ regrowth, the post anneal crystallinity is equivalent by RBS and x-ray evaluation to virgin single crystal wafers. In situ regrowth is most pronounced during the high beam current ion mixing type implants which produce wafer temperatures of about 250°C. The final crystalline quality which results from different sequences of amorphization and ion mixing implants, is strongly dependent upon the amount of in situ regrowth which has occurred. The greater the in situ regrowth the poorer the final crystalline quality.