Solid Phase Crystallization of amorphous silicon films, deposited by the Low Pressure Chemical Vapor Deposition technique, is studied by in-situ monitoring the film conductance. The crystal growth rate VG, deduced from this measurement, was found to be thermally activated. The activation energy E behaviour for films with different doping varying in a great range, from undoped to 4×1019 cm−3, was then deduced. This behaviour, described for the first time in this work, shows a constant E for undoped and weak doping, then a high decrease after a doping value threshold. The undoped films show a decreasing E when the deposition rate increases i.e. when the structure of the amorphous deposited film tends to correspond to the relaxed amorphous network. All these new results are used to introduce a crystallization model based on a crystalline-amorphous double phase and on the charge of defects at the crystal-amorphous interface.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.