It is shown that increasing the role of control methods, identifying patterns and accuracy of performing technological operations, establishing the relationship between the characteristics of the technological process and the yield of suitable products, will ensure the reproducibility of technology and the formation of instrument structures with specified parameters. In the technological process of production, instrument structures are formed and constructive and technological foundations are implemented, on which the specified parameters are established in technological and final tests. Providing the specified parameters of device structures, depending on the production processes, is carried out on the basis of increasing the dielectric strength of oxide layers, improving the production process, and reducing the number of defects in oxide films. Improving the cleanliness during the production process allows you to reduce the level of defective structures. The inconsistency of the coefficients of thermal expansion of the materials used is the cause of failures of elements of integral electronics and a decrease in their reliability. Analysis of thermal effects and associated mechanical loads allows one to assess the optimality of the selected materials and to clarify the likely failure mechanisms. Knowledge of the failure mechanisms makes it possible to calculate the reliability of the device at the design stage, as well as to predict the reliability of the equipment being developed. The reproducibility of the technology is ensured by conducting a statistical analysis of the technological process, containing statistical processing, establishing statistical relationships between parameters, determining the regularities of the technological process, constructing regression models for the relationship between the yield of good products and modes of technological operations, and analyzing the stability of the technological process. The traceability of the relationship between the parameters of instrument structures and the technology of their manufacture allows to reduce the level of their defectiveness, statistical regulation, based on the measured values of the parameters, and determining their position relative to the regulation limits, ensures the accuracy of the production process.
The area of practical application of thermoelectric materials depends on the value of the thermoelectric figure of merit. The use of semiconductor materials makes it possible to realize the conditions under which the ratio of their parameters ensures the achievement of high values of thermoelectric figure of merit. The achievement of the maximum thermoelectric figure of merit causes an increase in the efficiency of conversion processes due to the improvement of the thermoelectric properties of the material. The position of the maximum value of the thermoelectric figure of merit is predetermined by the scattering parameters and the ratio of the mobilities and effective masses of charge carriers. The nature of the change in electrical conductivity is determined by the behavior of the concentration of charge carriers. Thermal conductivity, like electrical conductivity, is proportional to the concentration of electrons and the mean free path. An increase in thermoelectric efficiency is achieved by optimizing thermoelectric parameters by doping and improving the properties of com¬pounds, which leads to an optimization of the concentration of charge carriers, a change in the density of states, and a decrease in the phonon component of thermal conductivity. The improvement of the thermoelectric properties of the material and the increase in the efficiency of the conversion processes are provided at a certain concentration of charge carriers, which corresponds to the optimal value.
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