Recent growth in the portable wireless communication market has driven semiconductor technologies toward voltage and power reduction. The reduced junction capacitance and near-ideal MOS device characteristics of SO1 provides an inherent advantage for low-voltage low-power applications. Substantial progress in applying SO1 technology for these applications has been demonstrated in recent years. The quest for a single chip system has also initiated work in developing high frequency and analog SO1 circuits. In this paper, the application of Thin-Film-Silicon-On-Insulator (TFSOI) technology for wireless communication systems will be reviewed and future development will be discussed.
A new type of dual-mode phase shifter which uses a tranversely magnetized variable field section is described. The device retains the features of the conventional dual-mode phase shifter--low insertion loss, moderate amplitude modulation, adequate frequency bandwidth, simple physical geometry--which allow it to be considered for use in two-dimensional scanning arrays. However, because of the transverse magnetizing field, the shorted-turn resistance is increased which results in either reduced switching time or reduced switching energy when compared with the conventional dual-mode unit which utilizes a longitudinal magnetizing field.
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