Articles you may be interested inOn the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductorfield-effect-transistors Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric and its impact on mobility Appl. Phys. Lett. 93, 083510 (2008); 10.1063/1.2976632Low temperature mobility in hafnium-oxide gated germanium p -channel metal-oxide-semiconductor field-effect transistors Appl.The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin Hf O 2 gate dielectrics An efficient numerical method for the evaluation of the Green's function used in the calculation of the Coulomb-limited electron mobility in high-metal oxide semiconductor field effect transistors is presented. This simple method is applicable to gate stacks with an arbitrary number of layers of varying dielectric permittivity. A charge profile with varying dielectric profile is demonstrated to show an increase in Coulomb-limited mobility of 16% in comparison to a point charge located at the interface. A metal gate reduces the scattering potential due to its infinite dielectric constant which leads to lesser impact of charge in comparison to a polysilicon gate. The Coulomb-limited mobility for devices having identical equivalent oxide thickness of 0.5-0.8 nm with ͑a͒ a hafnium silicate interfacial layer ͑IL͒ and ͑b͒ zero IL is presented.[This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-2 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-3 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-4 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-5 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.64.175.185 On: Mon, 08 Dec 2014 16:08:55 063706-6 D. Casterman and M. M. De Souza J. Appl. Phys. 107, 063706 ͑2010͒ [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http...
A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour is attributed to a carbon nanotube work function higher than (or close to) palladium as well as a large hole-to-electron effective mass ratio of approximately 2.5 predicted by hybridization in small-diameter nanotubes. A variation of the conduction type with temperature is also observed and is attributed to an increase of the palladium work function and decrease of the CNT work function with increasing temperature.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.