Optical transmission, photoluminescence, and X-ray diffraction have been used for studying structural disorder in Hg1-xCdxTe (x=0.3–0.4) films grown by Molecular-Beam Epitaxy on GaAs and Si substrates. According to all three methods, studied films immediately after the growth showed quite different scale of the disorder. After thermal annealing films showed similar optical properties, yet their structural properties remained different. It appears that the ability of Hg1-xCdxTe to gain good optical quality under annealing for considerably disordered initial material is not directly structure-related.
Optical transmission and photoluminescence were used for the study of wide-bandgap (0.8-1.1 eV) HgCdTe (MCT) material grown by molecular-beam epitaxy. The material, including layers used as spacers and barriers in potential-and quantum-well structures, showed a considerable degree of alloy disorder similar to narrow-gap MCT grown by the same method. In some samples, defect states in the bandgap were found. Optimization of the growth technology for wide-bandgap material should help improving the quality of MCT-based potential-and quantum-well structures designed for various applications.
Photoluminescence and X-ray diffraction (XRD) were used for the studies of the properties of HgCdTe samples with CdTe molar fraction x=0.3 grown by various methods. According to the results of photoluminescence studies, all samples possessed a considerable degree of alloy disorder, yet the scale of the disorder seemed not to be directly related to the structural quality of the material as revealed using XRD. Prospects of using HgCdTe material grown by various methods in optoelectronic devices are discussed.
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