Optical and structural studies of Hg_0.7Cd_0.3Te samples grown by various methods

Abstract

Photoluminescence and X-ray diffraction (XRD) were used for the studies of the properties of HgCdTe samples with CdTe molar fraction x=0.3 grown by various methods. According to the results of photoluminescence studies, all samples possessed a considerable degree of alloy disorder, yet the scale of the disorder seemed not to be directly related to the structural quality of the material as revealed using XRD. Prospects of using HgCdTe material grown by various methods in optoelectronic devices are discussed.

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

“…A similar study was performed by Andryushchenko et al for MCT/GaAs and MCT/Si samples with x ~ 0.3 [111,112]. Optical and structural properties of films grown by MBE, LPE, MOCVD, and of a sample of bulk crystal were studied and compared.…”

“…PL studies were also employed for assessing, again by the Russian-Ukrainian collaboration involving Izhnin et al, the quality of MCT films with x ≈ 0.20-0.29 grown by LPE on (111)CdZnTe substrates [80]. The main investigation tool used in that study was electrical measurements (those of the Hall coefficient and conductivity) in combination with ion etching.…”