Abstract-We present an untethered, electrostatic, MEMS micro-robot, with dimensions of 60 m by 250 m by 10 m. The device consists of a curved, cantilevered steering arm, mounted on an untethered scratch drive actuator (USDA). These two components are fabricated monolithically from the same sheet of conductive polysilicon, and receive a common power and control signal through a capacitive coupling with an underlying electrical grid. All locations on the grid receive the same power and control signal, so that the devices can be operated without knowledge of their position on the substrate. Individual control of the component actuators provides two distinct motion gaits (forward motion and turning), which together allow full coverage of a planar workspace. These MEMS micro-robots demonstrate turning error of less than 3.7 mm during forward motion, turn with radii as small as 176 m, and achieve speeds of over 200 m sec with an average step size as small as 12 nm. They have been shown to operate open-loop for distances exceeding 35 cm without failure, and can be controlled through teleoperation to navigate complex paths. The devices were fabricated through a multiuser surface micromachining process, and were postprocessed to add a patterned layer of tensile chromium, which curls the steering arms upward. After sacrificial release, the devices were transferred with a vacuum microprobe to the electrical grid for testing. This grid consists of a silicon substrate coated with 13-m microfabricated electrodes, arranged in an interdigitated fashion with 2-m spaces. The electrodes are insulated by a layer of electron-beam-evaporated zirconium dioxide, so that devices placed on top of the electrodes will experience an electrostatic force in response to an applied voltage. Control waveforms are broadcast to the device through the capacitive power coupling, and are decoded by the electromechanical response of the device body. Hysteresis in the system allows on-board storage of = 2 bits of state information in response to these electrical signals. The presence of on-board state information within the device itself allows each of the two device subsystems (USDA and steering arm) to be individually addressed and controlled. We describe this communication and control strategy and show necessary and sufficient conditions for voltage-selective actuation of all 2 system states, both for our devices ( = 2), and for the more general case (where is larger.)[1586]
We discuss a robotic module called a Molecule. Molecules can be the basis for building selfreconfiguring robots. They support multiple modalities of locomotion and manipulation. We describe the design, functionality, and control of the Molecule. We show how a set of Molecules can aggregate as active three-dimensional structures that can move and change shape. Finally, we discuss our Molecule experiments.
The common assumption that precision is the limit of accuracy in localization microscopy and the typical absence of comprehensive calibration of optical microscopes lead to a widespread issue—overconfidence in measurement results with nanoscale statistical uncertainties that can be invalid due to microscale systematic errors. In this article, we report a comprehensive solution to this underappreciated problem. We develop arrays of subresolution apertures into the first reference materials that enable localization errors approaching the atomic scale across a submillimeter field. We present novel methods for calibrating our microscope system using aperture arrays and develop aberration corrections that reach the precision limit of our reference materials. We correct and register localization data from multiple colors and test different sources of light emission with equal accuracy, indicating the general applicability of our reference materials and calibration methods. In a first application of our new measurement capability, we introduce the concept of critical-dimension localization microscopy, facilitating tests of nanofabrication processes and quality control of aperture arrays. In a second application, we apply these stable reference materials to answer open questions about the apparent instability of fluorescent nanoparticles that commonly serve as fiducial markers. Our study establishes a foundation for subnanometer localization accuracy in widefield optical microscopy.
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (E G ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today’s commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga2O3 device technologies. In this work, a novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga2O3 epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm2/Vs and a volume charge of ∼3 × 1017 cm–3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga2O3/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga2O3/4H-SiC interface is dominated by the thickness of the SiN x bonding layer and an unintentionally formed SiO x interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 μm thick Ga2O3 layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga2O3 metal–semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.
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