Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Chao, P.C.; Chu, K.; Creamer, Carlton; Diaz, J.; Yurovchak, Tom; Shur, M. S.; Kallaher, R. L.; McGray, Craig D.; Via, G. D.; Blevins, J. D.

doi:10.1109/ted.2015.2480756

Cited by 84 publications

(51 citation statements)

References 8 publications

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“…It should be noted that existing GaN-based devices already face challenges with heat removal at high power levels and have used diamond layers for heatsinking. [233][234][235][236][237] Devices made of AlGaN, AlN, and especially Ga 2 O 3 will likely also need to be bonded to diamond heatsink layers for thermal management. Materials such as c-BN and diamond that offer not only high potential power capability but high thermal conductivity in the same material could be especially advantageous for nextgeneration RF power devices.…”

Section: Rf Source Powermentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

913

463

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Section: Rf Source Powermentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

913

463

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“…Chemical vapor deposited (CVD) polycrystalline diamond has the highest thermal conductivity reaching up to 2000 W m −1 K −1 , which can greatly improve the thermal management of a GaN device . The GaN‐on‐diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN‐on‐SiC device …”

Section: Introductionmentioning

confidence: 99%

“…4 The GaN-on-diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN-on-SiC device. [5][6][7][8][9][10] However, for a GaN-on-diamond device, the heat spreading capability is dependent on not only the diamond thermal conductivity but also the significant effective thermal boundary resistance (TBR) of the GaN/diamond interface. TBR is a lump resistance, including contributions to a dielectric layer and the high-grain-boundary-density diamond near to the interface.…”

Section: Introductionmentioning

confidence: 99%

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Xin

Wei

Kong³

et al. 2019

Surface & Interface Analysis

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The cooling behavior of GaN‐on‐diamond substrate can be enhanced by reducing the thermal boundary resistance (TBR), which is mainly determined by the nature of interlayer. Although SiN film is considered as the primary candidate of dielectric layer, it is still needed to be optimized. In order to facilitate the understanding of the influence of dielectric layer on the TBR of GaN‐on‐Diamond substrate, aluminum nitride (AlN), and silicon nitride (SiN) film were compared systematically, both of which are 100 nm. The time‐domain thermoreflectance (TDTR) measurements, adhesion evaluation, and microstructural analysis methods were adopted to analyse these two interlayers. The results show the TBR of SiN interlayer is as low as 38.5 ± 2.4 m2K GW−1, comparing with the value of 56.4 ± 5.5 m2K GW−1 for AlN interlayer. The difference of TBR between these two interlayers is elucidated by the diamond nucleation density, and the adhesion between the diamond film and GaN substrate, both of which are affected by the surface charge and chemical groups of the dielectric layer.

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“…SiC substrate is removed with an etch process designed for low roughness. A bonding adhesive is then deposited on both the GaN surface and a commercially available diamond substrate, and the wafers are bonded at room temperature and subsequently annealed to strengthen the bond [6].…”

Section: A Diamond Bonded To Ganmentioning

confidence: 99%

“…To address this challenge, the DARPA Near-Junction Thermal Transport (NJTT) program focused on reducing the thermal resistance of the near-junction region of GaN transistors, without negatively affecting the quality of the epitaxy, through the integration of high thermal conductivity diamond substrates [4]. Results to date have demonstrated an increase in the heat density and power handling capability of GaN HEMT devices by greater than 3x [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Near-junction microfluidic thermal management of RF power amplifiers

Bar‐Cohen

Maurer

Sivananthan

2015

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

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While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power am plifiers.

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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Cited by 84 publications

References 8 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Near-junction microfluidic thermal management of RF power amplifiers

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