Although the kinetics of CF formation/ dissolution is still unclear, it is widely accepted that the CF formation/dissolution is strongly related to the electromigration and electrochemical reaction of anion (i.e., oxygen vacancy) [13][14][15][16] or cation (i.e., Cu 2+ , Ag + or Ni 2+ ). [17][18][19][20][21][22] Generally, RS behavior can be classifi ed as two modes: nonvolatile memory switching (MS) and volatile threshold switching (TS). In the MS mode, both LRS and HRS can be maintained after removing the external voltage, while the LRS in the TS mode will be back to the HRS once the applied voltage is smaller than a critical value. [23][24][25] To avoid confusion with MS, the LRS and HRS in TS are renamed as "TS ON-state" and "TS OFFstate" in this article. The MS device can be used for the non-volatile data storage [1][2][3][4][5] while TS device can be as a selector in series with memory cell to suppress crosstalk effect in the crossbar array. [26][27][28][29][30] Recently, some groups reported that TS and MS can coexist and mutually transform in a single device at suitable external excitation. [23][24][25][26][27][28] Several models have been proposed to explain this phenomenon, including CF thermal instability, [ 23 ] strong electron correlation effect, [ 24 ] quantum-wire model, [ 25 ] interface barrier modulation, [ 26 ] and space charge effect. [ 27 ] However, the underlying mechanism of the phenomenon is still unclear, especially lacking of direct evidences to uncover when and how the two RS modes happen and what is the internal relationship between them.Here, we demonstrate that the TS and MS modes can be modulated in the Ag/SiO 2 /Pt structure by controlling the compliance current ( I CC ) in electroforming. We systematically investigate the morphologies, chemical components, and dynamic growth of the CF using scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) analysis. The results confi rm that the TS and MS modes correspond to the CF consisting of isolated and continuous Ag nanocrystals, respectively. In addition, by Kelvin probe force microscopy (KPFM) studies, the voltage potential distribution of CF in the ON-and OFF-state further indicate that the TS mode is Volatile threshold switching (TS) and non-volatile memory switching (MS) are two typical resistive switching (RS) phenomena in oxides, which could form the basis for memory, analog circuits, and neuromorphic applications. Interestingly, TS and MS can be coexistent and converted in a single device under the suitable external excitation. However, the origin of the transition from TS to MS is still unclear due to the lack of direct experimental evidence. Here, conversion between TS and MS induced by conductive fi lament (CF) morphology in Ag/SiO 2 /Pt device is directly observed using scanning electron microscopy and high-resolution transmission electron microscopy. The MS mechanism is related to the formation and dissolution of CF consisting of continuous Ag...
The particulate observing scanning polarimeter (POSP) measurement spatial response function (SRF) relates to the weighted contribution of each location within the measurement footprint, which is determined by the percentage of the dwell time of each location on the Earth surface to the overall sampling integration time. The SRF resulting from a combination of the equally weighted instantaneous field of view (IFOV) during integration is required for an accurate modeling. Simply using a mean value SRF assuming an equivalent weight at each sampling position instead of the actual SRF will inevitably introduce errors. Considering the data fusion between POSP and high spatial resolution sensors, a discrete integration method that takes the effect of actual weights into account is proposed in this paper. The simulation results of the integral model and the mean value model show that the larger the intensity change in the sampling area covered by the IFOV of the POSP during a single sampling, the more significant the difference between the two results. Meanwhile, the integration SRF is validated by resampling the simultaneous imaging polarization camera (SIPC) data, which is compared with POSP data acquired at the same time in an aerial experiment. The results show that the integration SRF model is more accurate to characterize the details of POSP measurement than the mean value SRF model. The proposed SRF reduces the root mean square error (RMSE) of convolved results and measurements by 5∼30% with different radiance contrast scene.
Q. Liu, M. Liu, and co‐workers present direct evidence to illuminate microscopic mechanism of threshold and memory resistive switching in oxide‐electrolyte RRAM on page 5679. The conversion between two switching modes results from morphology change of conductive filament based on SEM and TEM observations. Combing with I–V fitting and in situ AFM analysis, the conduction mechanisms of both switching modes are demonstrated.
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