Light-emitting electrochemical cells with ionic transition metal complexes (iTMCs) comprising the active layer have great potential for lighting applications, but to date high luminance and fast turn on times have been challenging to attain without significant loss of lifetime. Here, we demonstrate iridium iTMC devices with high luminances of 3000–5000 cd/m2, reduced turn on times, and long lifetimes through incorporation of ionic additives. Furthermore, we show additional reduction of turn on time to seconds through heat processing. We rationalize these results as the enhancement of carrier injection through improved double-layer formation at the electrodes.
Introducing quantum transport into silicon transistors in a manner compatible with industrial fabrication has the potential to transform the performance horizons of large scale integrated silicon devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) transistors fabricated using industrial silicon complementary metal-oxide-semiconductor processing. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background.
Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (VG). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on VG that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.
We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors [J. Appl. Phys. 118, 124505 (2015)]. In these devices, p+ doping extensions are introduced at the source-channel and drain-channel junctions, thus creating two potential barriers that define the quantum well across whose quasi-bound states resonant/sequential tunneling may occur. Our study, based on the quantum transmitting boundary method, predicts the presence of a sharp NDT in devices with a nominal gate length of 10-to-20 nm at low temperatures (∼10 K). At higher temperatures, the NDT weakens and disappears altogether as a result of increasing thermionic emission over the p+ potential barriers. In larger devices (with a gate length of 30 nm or longer), the NDT cannot be observed because of the low transmission probability and small energetic spacing (smaller than kBT) of the quasi-bound states in the quantum well. We speculate that the inability of the model to predict the NDT observed in 40 nm gate-length devices may be due to an insufficiently accurate knowledge of the actual doping profiles. On the other hand, our study shows that NDT suitable for novel logic applications may be obtained at room temperature in devices of the current or near-future generation (sub-10 nm node), provided an optimal design can be found that minimizes the thermionic emission (requiring high p+ potential-barriers) and punch-through (that meets the opposite requirement of potential-barriers low enough to favor the tunneling current).
Due to the performance requirements of displays and lighting applications, there is a great need to measure the radiant flux and colour of light-emitting diodes (LEDs) simultaneously in a high throughput format. We evaluate the feasibility of obtaining reliable colour and radiant flux values of LEDs with a low-cost office flatbed document scanner under factory settings versus conventional measurements. Colour purity was evaluated against a spectrometer and a digital camera, while radiant flux was evaluated against photodiodes. Scanner colour rendition of red, green and yellow LEDs was of variable quality. The scanner showed better correlation to conventional radiant flux measurements, with linear least-squares agreement between 0.934 and 0.985. A scanner represents a low cost and high throughput means of evaluating LEDs with simultaneous measures of both electroluminescent flux and emission colour with operational time.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.