One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core.
The unique optical properties exhibited by visible emitting core/shell quantum dots with especially thick shells are the focus of widespread study, but have yet to be realized in infrared (IR)-active nanostructures. We apply an effective-mass model to identify PbSe/CdSe core/shell quantum dots as a promising system for achieving this goal. We then synthesize colloidal PbSe/CdSe quantum dots with shell thicknesses of up to 4 nm that exhibit unusually slow hole intraband relaxation from shell to core states, as evidenced by the emergence of dual emission, i.e., IR photoluminescence from the PbSe core observed simultaneously with visible emission from the CdSe shell. In addition to the large shell thickness, the development of slowed intraband relaxation is facilitated by the existence of a sharp core-shell interface without discernible alloying. Growth of thick shells without interfacial alloying or incidental formation of homogeneous CdSe nanocrystals was accomplished using insights attained via a systematic study of the dynamics of the cation-exchange synthesis of both PbSe/CdSe and the related system PbS/CdS. Finally, we show that the efficiency of the visible photoluminescence can be greatly enhanced by inorganic passivation.
Two-photon absorption (2PA) spectra with pairs of extremely nondegenerate photons are measured in several direct-gap semiconductors (GaAs, CdTe, ZnO, ZnS and ZnSe) using picosecond or femtosecond pulses. In ZnSe, using photons with a ratio of energies of ~12, we obtain a 270-fold enhancement of 2PA when comparing to the corresponding degenerate 2PA coefficient at the average photon energy (ηω1 + ηω2)/2. This corresponds to a pump photon energy of 8% of the bandgap. 2PA coefficients as large as 1 cm/MW are measured. Thus, by using two widely different wavelengths we are able to access the large 2PA observed previously only in narrow gap semiconductors. We also calculate the corresponding enhancement of nonlinear refraction, consisting of two-photon, AC-Stark and Raman contributions. The net effect is a smaller enhancement, but exhibits very large dispersion within the 2PA regime.
The linear and nonlinear optical properties of a series of polymethine molecules are investigated to study the effects of molecular structure and the host environment on overall nonlinear absorption performance. The linear characterization includes measuring the solvatochromic shifts between absorption and fluorescence peaks and studying the excited-state orientational diffusion kinetics. The nonlinear characterization involves measuring the excited-state absorption spectra with a femtosecond white-light-continuum pump-probe technique and performing Z scans and nonlinear transmission measurements from the picosecond to the nanosecond time regimes. The results of these experiments allow us to develop an energy-level structure for the polymethines, which accurately predicts nonlinear absorption properties from the picosecond to the nanosecond time regimes. From this model we are able to identify the key molecular parameters for improved nonlinear absorption.
We calculate the spectrum of three-photon absorption (3PA) in zinc blende semiconductors using Kane's four-band model. We apply this to ZnSe and measure the 3PA spectrum using femtosecond pulses, obtaining excellent agreement. The spectrum shows the apparent onset of 3PA from the split-off band and also shows quantum interference between the several possible evolution pathways when exciting carriers from valence to conduction band.
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