International audienceIn this review paper, we present radiation effects on silica-based optical fibers. We first describe the mechanisms inducing microscopic and macroscopic changes under irradiation: radiation-induced attenuation, radiation-induced emission and compaction. We then discuss the influence of various parameters related to the optical fiber, to the harsh environments and to the fiber-based applications on the amplitudes and kinetics of these changes. Then, we focus on advances obtained over the last years. We summarize the main results regarding the fiber vulnerability and hardening to radiative constraints associated with several facilities such as Megajoule class lasers, ITER, LHC, nuclear power plants or with space applications. Based on the experience gained during these projects, we suggest some of the challenges that will have to be overcome in the near future to allow a deeper integration of fibers and fiber-based sensors in radiative environments

We investigated the efficiencies of two different approaches to increase the radiation hardness of optical amplifiers through development of improved rare-earth (RE) doped optical fibers. We demonstrated the efficiency of codoping with Cerium the core of Erbium/Ytterbium doped optical fibers to improve their radiation tolerance. We compared the γ-rays induced degradation of two amplifiers with comparable pre-irradiation characteristics (~19 dB gain for an input power of ~10 dBm): first one is made with the standard core composition whereas the second one is Ce codoped. The radiation tolerance of the Ce-codoped fiber based amplifier is strongly enhanced. Its output gain decrease is limited to ~1.5 dB after a dose of ~900 Gy, independently of the pump power used, which authorizes the use of such fiber-based systems for challenging space missions associated with high total doses. We also showed that the responses of the two amplifiers with or without Ce-codoping can be further improved by another technique: the pre-loading of these fibers with hydrogen. In this case, the gain degradation is limited to 0.4 dB for the amplifier designed with the standard composition fiber whereas 0.2 dB are reported for the one made with Ce-codoped fiber after a cumulated dose of ~900 Gy. The mechanisms explaining the positive influences of these two treatments are discussed.

International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO$_2$ ). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation