Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Goiffon, Vincent; Estribeau, Magali; Marcelot, Olivier; Cervantes, Paola; Magnan, Pierre; Gaillardin, M.; Virmontois, Cédric; Martin-Gonthier, Philippe; Molina, Romain; Corbière, Franck; Girard, Sylvain; Paillet, Philippe; Marcandella, Claude

doi:10.1109/tns.2012.2222927

Cited by 81 publications

(54 citation statements)

References 22 publications

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“…The space charge region does not spread to touch the oxide layer and STI at lower TID, so the increased grayscale value of pixels caused by the dark current increase with TID is very small. However, with TID increase, SCR can touch the oxide layer and STI, in which case the traps caused by TID are rich [17]. The pixel grayscale value increases sharply with larger contact area between the SCR and STI.…”

Section: Radiation Damagementioning

confidence: 99%

Study on the Availability of 4T-APS as a Video Monitor and Radiation Detector in Nuclear Accidents

Zou

Han

et al. 2018

Sustainability

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Abstract:In this paper, we present the availability of an active pixel sensor (APS) with four transistors (4T) as a video monitor and radiation detector. Analyzing radiation damage must be one of the first steps in recovering from nuclear accidents, and the radiation response characteristic is the basis for the use of 4T-APS to detect radiation. The goal of this work is to suggest the use of cameras with 4T-APS in widely distributed irradiation detectors. The total ionizing dose (TID) of radiation damage on 4T-APS provided a threshold. Radiation tolerance was improved with the help of a radiation shielding structure. The radiation response showed integration time dependence and pixel information dependence, and greater radiation response was observed from the pixels with lower grayscale values. Two methods are suggested based on different monitoring scenes. This study can help to greatly improve nuclear accident emergency response and the safety of nuclear facilities.

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Section: Radiation Damagementioning

confidence: 99%

Study on the Availability of 4T-APS as a Video Monitor and Radiation Detector in Nuclear Accidents

Zou

Han

et al. 2018

Sustainability

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“…Each effect is known to increase dark current in CIS using PPDs [8]- [10] and to induce DC-RTS. Moreover, changes in pinning voltage, Photon Transfer Curve (PTC), and especially Full Well Capacity (FWC), have been reported recently [10]. This is why this section presents proton induced ionizing and non-ionizing dose results.…”

Section: Cumulative Dose Effectsmentioning

confidence: 99%

“…With these advantages, it would seem very worthwhile to focus on digital CMOS image sensors integrating numerous electrical functions surrounding the pixel array in order to take full advantage of the CMOS technology. However, CMOS imagers are known to be sensitive to dose effects [5]- [7], especially when using pinned photodiodes [8]- [10], and digital CMOS functions are sensitive to single event effects [11]. Smart imagers integrating electronic functions therefore need to be evaluated to determine their tolerance to both dose and single event effects.…”

Section: Introductionmentioning

confidence: 99%

“…Smart imagers integrating electronic functions therefore need to be evaluated to determine their tolerance to both dose and single event effects. Numerous studies deal with ionizing and non-ionizing dose effects [5]- [10] while only a few discuss single events [12]- [15]. Earlier studies [12] [13] have focused on radiation-tolerant devices using hardening-by-design techniques.…”

Section: Introductionmentioning

confidence: 99%

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Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

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This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations. Index Terms-Active pixel sensor (APS), CMOS image sensor (CIS), displacement damage () dose , monolithic active pixel sensor (MAPS), pinned photodiode (PPD), random telegraph signal (RTS), single event effects (SET), total ionizing dose (TID).

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“…CIS115s will undergo testing up to twice this dose using a Co-60 cell as a gamma irradiation source. The lag performance is expected to be affected [7], and other changes in performance will be measured. Furthermore, a complete and detailed space qualification process is planned for the CIS115s, including further proton and gamma testing as well as exposure to heavy ions to study for single event effects and an electron irradiation to study the combination of TID and displacement damage.…”

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confidence: 99%

Proton irradiation of the CIS115 for the JUICE mission

et al. 2015

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The CIS115 is one of the latest CMOS Imaging Sensors designed by e2v technologies, with 1504x2000 pixels on a 7 µm pitch. Each pixel in the array is a pinned photodiode with a 4T architecture, achieving an average dark current of 22 electrons pixel -1 s -1 at 21°C measured in a front-faced device. The sensor aims for high optical sensitivity by utilising e2v's back-thinning and processing capabilities, providing a sensitive silicon thickness approximately 9 µm to 12 µm thick with a tuned anti-reflective coating.The sensor operates in a rolling shutter mode incorporating reset level subtraction resulting in a mean pixel readout noise of 4.25 electrons rms. The full well has been measured to be 34000 electrons in a previous study, resulting in a dynamic range of up to 8000. These performance characteristics have led to the CIS115 being chosen for JANUS, the highresolution and wide-angle optical camera on the JUpiter ICy moon Explorer (JUICE).The three year science phase of JUICE is in the harsh radiation environment of the Jovian magnetosphere, primarily studying Jupiter and its icy moons. Analysis of the expected radiation environment and shielding levels from the spacecraft and instrument design predict the End Of Life (EOL) displacement and ionising damage for the CIS115 to be equivalent to 10 10 10 MeV protons cm -2 and 100 krad(Si) respectively. Dark current and image lag characterisation results following initial proton irradiations are presented, detailing the initial phase of space qualification of the CIS115. Results are compared to the pre-irradiation performance and the instrument specifications and further qualification plans are outlined.

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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Cited by 81 publications

References 22 publications

Study on the Availability of 4T-APS as a Video Monitor and Radiation Detector in Nuclear Accidents

Study on the Availability of 4T-APS as a Video Monitor and Radiation Detector in Nuclear Accidents

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Proton irradiation of the CIS115 for the JUICE mission

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