Solution‐processed PbS colloidal quantum dots (CQDs) are promising optoelectronic materials for next‐generation infrared imagers due to their monolithic integratability with silicon readout circuit and tunable bandgap controlled by CQDs size. However, large‐size PbS CQDs (diameter >4 nm) for longer shortwave‐infrared photodetection consist mainly of {100} facets with incomplete surface passivation and unsatisfied stability. Here, it is reported that perovskite‐bridged PbS CQDs, in which the {100} facets of the CQDs are epitaxially bridged with CsPbI3–xBrx perovskite, can achieve improved passivation and enhanced stability in comparison with the traditional strategies. The resultant infrared CQDs photodiodes exhibit significantly reduced dark current, nearly 50% enhanced photoresponse, and improved work stability. These superior properties synergistically produce the most balanced performance (with a high −3 dB bandwidth of 42 kHz and an impressive specific detectivity of 6.2 × 1012 Jones) among the reported CQDs photodetectors.
Infrared solar cells are regarded as candidates for expanding the solar spectrum of c‐Si cells, and the window electrodes are usually transparent conductive oxide (TCO) such as widely used indium tin oxide material. However, due to the low transmittance of the TCO in the near‐infrared region, most near‐infrared light cannot penetrate the electrode and be absorbed by the active layer. Here, the propose a simple procedure to fabricate the window materials with high near‐infrared transmittance and high electrical conductivity, namely the hydrogen‐doped indium oxide (IHO) films prepared by room temperature magnetron sputtering. The low‐temperature annealed IHO conductive electrodes exhibit high mobility of 98 cm2 V−1 s−1 and high infrared transmittance of 85.2% at 1300 nm, which endows the lead quantum dot infrared solar cell with an improved short‐circuit current density of 37.2 mA cm−2 and external quantum efficiency of 70.22% at 1280 nm. The proposed preparation process is simple and compatible with existing production lines, which gifts the IHO transparent conductive film great potential in broad applications that simultaneously require high infrared transmittance and high conductivity.
Short‐wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short‐wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low‐cost, high‐performance, and high‐stability TexSe1–x short‐wave infrared photodiode detector is reported. The TexSe1–x thin film is fabricated through CMOS‐compatible low‐temperature evaporation and post‐annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad‐spectrum response of 300–1600 nm, a room‐temperature specific detectivity of 1.0 × 1010 Jones, a −3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te‐based photodiode devices and a dark current density 7 orders of magnitude smaller than Te‐based photoconductive and field‐effect transistor devices. With a simple Si3N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized TexSe1–x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS‐compatible infrared imaging chips.
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