A fabric?s moisture/air permeability is a main factor for the fabric design
for advanced applications, and no theoretical model was available in
literature for an optimal permeability. In this paper, we use the
capillary-like effect to elucidate the permeability property, and the effect
of nano/micro particles on the fabric?s surface on the permeability is
studied by the geometric potential theory. Our theoretical analysis shows
that an unclean surface gives a negative impact on the permeability. A
superhydrophobic surface is needed to design a good and lasting moisture/air
permeability.
The chemical mechanical planarization (CMP) has been a key technology in the copper interconnection process of dual damascene. Corrosion inhibitors are often used as an important component in CMP slurry to protect the copper from corrosion at the recess to obtain a high or low selectivity ratio for copper removal rate. 1,2,4-triazole (TAZ) has been recently reported to be a promising inhibitor that can replace benzotriazole(BTA). It has been proved that 0.045M TAZ can achieve the same chemical protection as 0.002M benzotriazole on copper surface. The present study investigates the adsorption passivation reaction between different treated copper samples and a representative corrosion inhibitor TAZ. The three kinds of copper samples treated with as received, citric acid and citric acid + H2O2 were soaked in TAZ solution of 0.05M. The change of adsorption characteristics of copper surface was examined by contact angle measuring instrument, the formation of Cu-1,2,4-triazole was quantified by electrochemical impedance spectroscopy (EIS) and the change of chemical elements on copper surface was analyzed by X-ray photoelectron spectroscopy (XPS). Based on the experimental results, it can be concluded that TAZ can react on the surface of copper to form a weak passivation film of Cu-1,2,4-triazole, and TAZ is preferentially adsorbed on the copper surface treated with citric acid+H2O2.
The cleaning of copper interconnect chemical mechanical polishing (CMP) is a key process in integrated circuits (ICs) fabrication. Colloidal silica, which is used as the abrasive material in copper CMP slurry, is considered as the main particle contamination. Abrasive particle residuals can cause device failure which need to be removed efficiently. In this paper, a type of CMP cleaner was used for particle removal using a cleaning solution consisting of FA/O II chelating agent and FA/O I surfactant. By varying the parameters of brush rotation speed, brush gap, and de-ionized water (DIW) flow rate, a series of experiments were performed to determine the best cleaning results. Atomic force microscope (AFM) measurement was used to characterise the surface morphology of the copper surface and the removal of abrasive particles. A scanning electron microscope (SEM) with EDX was used to observe and analyze the particles shape and elements. The optima parameters of CMP cleaner were obtained. Under those conditions, the abrasive silica particles were removed effectively.
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