Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO 2 /Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS 2 ) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS 2 film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS 2 were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.

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With the aim of reducing cost, carbon emissions, and service periods and improving clients’ satisfaction with the logistics network, this paper investigates the optimization of a variant of the location-routing problem (LRP), namely the regional low-carbon LRP (RLCLRP), considering simultaneous pickup and delivery, hard time windows, and a heterogeneous fleet. In order to solve this problem, we construct a biobjective model for the RLCLRP with minimum total cost consisting of depot, vehicle rental, fuel consumption, carbon emission costs, and vehicle waiting time. This paper further proposes a novel hyper-heuristic (HH) method to tackle the biobjective model. The presented method applies a quantum-based approach as a high-level selection strategy and the great deluge, late acceptance, and environmental selection as the acceptance criteria. We examine the superior efficiency of the proposed approach and model by conducting numerical experiments using different instances. Additionally, several managerial insights are provided for logistics enterprises to plan and design a distribution network by extensively analyzing the effects of various domain parameters such as depot cost and location, client distribution, and fleet composition on key performance indicators including fuel consumption, carbon emissions, logistics costs, and travel distance and time.

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Among large numbers of transition metal dichalcogenides (TMDCs), monolayer rhenium disulfide (ReS2) is of particular interest due to its unique structural anisotropy, which opens up unprecedented opportunities in dichroic atomical electronics. Understanding the domain structure and controlling the anisotropic evolution of ReS2 during the growth is considered critical for increasing the domain size toward a large-scale growth of monolayer ReS2. Herein, by employing angle-resolved Raman spectroscopy, we reveal that the hexagonal ReS2 domain is constructed by six well-defined subdomains with each b-axis parallel to the diagonal of the hexagon. By further combining the first-principles calculations and the transmission electron microscopy (TEM) characterization, a dislocation-involved anisotropic evolution is proposed to explain the formation of the domain structures and understand the limitation of the domain size. Based on these findings, growth rates of different crystal planes are well controlled to enlarge the domain size, and moreover, single-crystal domains with a triangle shape are obtained. With the improved domain size, large-scale uniform, strictly monolayer ReS2 films are grown further. Scalable field-effect transistor (FET) arrays are constructed, which show good electrical performances comparable or even superior to that of the single domains reported at room temperature. This work not only sheds light on comprehending the novel growth mechanism of ReS2 but also offers a robust and controllable strategy for the synthesis of large-area and high-quality two-dimensional materials with low structural symmetry.