Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS₂

Abstract

Among large numbers of transition metal dichalcogenides (TMDCs), monolayer rhenium disulfide (ReS2) is of particular interest due to its unique structural anisotropy, which opens up unprecedented opportunities in dichroic atomical electronics. Understanding the domain structure and controlling the anisotropic evolution of ReS2 during the growth is considered critical for increasing the domain size toward a large-scale growth of monolayer ReS2. Herein, by employing angle-resolved Raman spectroscopy, we reveal that the hexagonal ReS2 domain is constructed by six well-defined subdomains with each b-axis parallel to the diagonal of the hexagon. By further combining the first-principles calculations and the transmission electron microscopy (TEM) characterization, a dislocation-involved anisotropic evolution is proposed to explain the formation of the domain structures and understand the limitation of the domain size. Based on these findings, growth rates of different crystal planes are well controlled to enlarge the domain size, and moreover, single-crystal domains with a triangle shape are obtained. With the improved domain size, large-scale uniform, strictly monolayer ReS2 films are grown further. Scalable field-effect transistor (FET) arrays are constructed, which show good electrical performances comparable or even superior to that of the single domains reported at room temperature. This work not only sheds light on comprehending the novel growth mechanism of ReS2 but also offers a robust and controllable strategy for the synthesis of large-area and high-quality two-dimensional materials with low structural symmetry.

The Mobile and Pinned Grain Boundaries in 2D Monoclinic Rhenium Disulfide

“…The six S atoms are bonded with the central Re atom in distorted tetragonal (T′) coordination, [27] leading to its unique domain architects, fundamentals, and applications. [28][29][30] However, even some previous work studied the GBs in ReS 2 , [31] the comprehensive understandings of mechanical kinetics and a clear classification of these GBs are still lacking. In line with the enhanced atomic dynamics on surfaces, the facile atomic reconstructions (including the Re diamond-chain zipping/unzipping) in 2D ReS 2 have been observed.…”

Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

“…Figure 1d shows a TEM image at the contact region with EBI dosage of 6000 μC cm −2 . The thickness of the flake is 3 nm, which consists of fivelayer ReS 2 with each monolayer having a thickness of 0.6 nm 39 . The insets show obvious contrast between lattice disorders (labeled by red outline) and layer-by-layer structure (labeled by green outline).…”

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

“…Afterward, Kang and coworkers also investigated the structure evolution of CVD‐grown hexangular ReS 2 domains and proposed a dislocation‐involved anisotropic growth mechanism which is quite similar to the above demonstrated nano‐assembly growth mechanism. [ 116 ] So far, nearly all the abnormal growth behaviors and structure features of CVD‐grown ReX 2 have been clearly revealed. Importantly, the growth mechanism of ReX 2 could be extended to understand and control the growth of other low‐symmetry 2D materials (such as GaTe, 1T′ MoTe 2 /WTe 2 , etc.)…”