We show that magnetic spin wave resonance modes in an antidot patterned array are sensitive to small changes in the magnetic configuration near dots, resulting in strong localization effects as the field is increased. Frequencies measured using ferromagnetic resonance from an antidot array patterned from a NiFe/IrMn bilayer are interpreted using micromagnetic calculations, and it is shown that the observed field dependence of the resonance response can be attributed to strong interdot localization of spin waves. This field tunable localization is created by stray fields produced by magnetic poles at the dot surfaces.
The transport property of the La0.7Sr03MnO3/Si heterostructure was investigated theoretically by applying the drift-diffusion model to the present system. A simple scenario of the semiconductor band and electric field at the interface region of the heterostructure with various bias voltages are presented. The good agreement between the self-consistent calculated results and the experimental data indicates that the proposed band picture is valid for the interpretation of the transport property of the p-n heterojunctions made of La0.7Sr0.3MnO3 and Si regardless of the complexity of the interface structures and multi-couplings among charge, spin, lattice and orbital of manganites.
The lateral photovoltaic process on the La 0.9 Sr 0.1 MnO 3 / SrNb 0.01 Ti 0.99 O 3 heterostructure is revealed by solving time-dependent drift-diffusion equations in a two dimensional scenario. We find that both the conventional lateral photovoltage ͑LPV͒ effect and the Dember effect contribute to the LPV. Under a low irradiation, the conventional LPV process plays a main role in the lateral photovoltaic process. With the laser pulse energy large enough, the Dember process becomes dominant. Due to the competition between Dember and conventional lateral photovoltage, a laterally modulated photovoltage can be obtained theoretically on the n-type side of the heterostructure.
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