A theoretical study on the transport property of the La _0.7 Sr _0.3 MnO ₃ /Si p-n heterojunction

Abstract

The transport property of the La0.7Sr03MnO3/Si heterostructure was investigated theoretically by applying the drift-diffusion model to the present system. A simple scenario of the semiconductor band and electric field at the interface region of the heterostructure with various bias voltages are presented. The good agreement between the self-consistent calculated results and the experimental data indicates that the proposed band picture is valid for the interpretation of the transport property of the p-n heterojunctions made of La0.7Sr0.3MnO3 and Si regardless of the complexity of the interface structures and multi-couplings among charge, spin, lattice and orbital of manganites.

Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3 films

“…One may discuss this issue from the interface build-in-voltage generated by the work function difference between the neighboring layers. In the present case, the LSMO/BFO interface creates a built-in voltage of $0.26 V due to the work function difference, noting that the work function for LSMO is Ø LSMO ¼ 4.96 eV, 19 and that for BFO is Ø BFO ¼ 4.7 eV. 20 The built-in voltage is V built ¼ (Ø LSMO À Ø BFO )/e ¼ 0.26 V, which tends to induce the uniform polarization state in the bare BFO area (dark-contrast in Fig.…”

Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

“…2͑b͒, we can also see that the photovoltage decreases with the further decrease in the thickness of LSMO for the thickness being smaller than the critical value mentioned above. In order to understand the relation of peak photovoltage and the critical thickness of LSMO films in the heterostructures, self-consistent calculations were carried out theoretically based on the drift-diffusion model introduced in our previous works, [8][9][10] and the calculated energy-band diagrams near the interface of LSMO/SNTO and LSMO/Si heterostructures are plotted in Fig. 2͑c͒.…”

Novel Properties in Oxide Heterostructures

“…Furthermore, some numerical simulations have been carried out according to this model. 14,[28][29][30][31] Thus, the model, which grasps the main physics in this system, has been further developed.…”