This paper is concerned with joint determination of the optimal lot size and optimal number of shipments for an economic production quantity (EPQ) model with the reworking of random defective items produced. The classic EPQ model assumes a continuous issuing policy for satisfying product demand and perfect quality production for all items produced. However, in a real life vendor-buyer integrated-productioninventory system, a multi-delivery policy is used practically in lieu of the continuous issuing policy, and it is inevitable to generate defective items during a production run. In this study, all nonconforming items produced are considered to be repairable and are reworked in each cycle after the end of a production run. The fixed-quantity multiple installments of the finished batch can only be delivered to customers if the whole lot is quality assured at the end of the rework. Mathematical modeling is used and the longrun average integrated cost per unit time is derived. Convexity of the cost function is proved by the use of the Hessian matrix equations. A closed-form optimal productionshipment policy to the problem is obtained. A special case to the model is discussed. Finally, a numerical example is provided to demonstrate the model's practical usage.
2D
nanomaterials have attracted the attention of many researchers
for advanced electronic and optoelectronic devices. Transition metal
dichalcogenides (TMDs), such as MoS2, have been studied
actively due to their unique chemical and physical properties as a
new generation of electronic devices. However, the mechanism for self-limited
monolayer growth of a 2D TMDs material is still poorly understood.
This work fabricated about 490 cm2 area of monolayer MoS2 via face-to-face stacking chemical vapor deposition (CVD)
synthesis. As the growth space changes, either nucleation or grain
growth can be promoted. The 200 μm gap between the metal oxide
film and the Si wafer substrate gives the best stacking setup for
high-quality, high-uniformity, and 7 times photoluminescence intensity-enhanced
(compared to the reactant powder CVD MoS2 growth method)
monolayer MoS2 nanomaterial fabrication. Our results provide
an innovative CVD process for the mass production-scale synthesis
of monolayer MoS2 and other 2D TMDs materials for optoelectronic
applications in the semiconductor manufacturing field.
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