2D
nanomaterials have attracted the attention of many researchers
for advanced electronic and optoelectronic devices. Transition metal
dichalcogenides (TMDs), such as MoS2, have been studied
actively due to their unique chemical and physical properties as a
new generation of electronic devices. However, the mechanism for self-limited
monolayer growth of a 2D TMDs material is still poorly understood.
This work fabricated about 490 cm2 area of monolayer MoS2 via face-to-face stacking chemical vapor deposition (CVD)
synthesis. As the growth space changes, either nucleation or grain
growth can be promoted. The 200 μm gap between the metal oxide
film and the Si wafer substrate gives the best stacking setup for
high-quality, high-uniformity, and 7 times photoluminescence intensity-enhanced
(compared to the reactant powder CVD MoS2 growth method)
monolayer MoS2 nanomaterial fabrication. Our results provide
an innovative CVD process for the mass production-scale synthesis
of monolayer MoS2 and other 2D TMDs materials for optoelectronic
applications in the semiconductor manufacturing field.
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