Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes.
Polarizing beam splitters that use the anisotropic spectral reflectivity (ASR) characteristic of high-spatialfrequency multilayer binary gratings have been designed, fabricated, and characterized. Using the ASR effect with rigorous coupled-wave analysis, we design an optical element that is transparent for TM polarization and reflective for TE polarization at an arbitrary incidence angle and operational wavelength. The experiments with the fabricated element demonstrate a high efficiency (Ͼ97%), with polarization extinction ratios higher than 220:1 at a wavelength of 1.523 m over a 20°angular bandwidth by means of the ASR characteristics of the device. These ASR devices combine many useful characteristics, such as compactness, low insertion loss, high efficiency, and broad angular and spectral bandwidth operations.
A 490-nm-deep nanostructure with a period of 200 nm was fabricated in a GaAs substrate by use of electron-beam lithography and dry-etching techniques. The form birefringence of this microstructure was studied numerically with rigorous coupled-wave analysis and compared with experimental measurements at a wavelength of 920 nm. The numerically predicted phase retardation of 163.3± was found to be in close agreement with the experimentally measured result of 162.5 ± , thereby verifying the validity of our numerical modeling. The fabricated microstructures show extremely large artif icial anisotropy compared with that available in naturally birefringent materials and are useful for numerous polarization optics applications. © 1995 Optical Society of AmericaThe form-birefringence or artificial-birefringence effect occurs when the period of such microstructures is much less than the wavelength of the incident optical field and the far field of the transmitted radiation will possess only zero-order diffraction. The two prevalent approaches to characterize such artif icial dielectric properties of the microstructured boundary use the effective medium theory 1 and rigorous coupledwave analysis 2,3 (RCWA). In this study we choose to use RCWA because the simpler effective medium theory does not provide accurate results when the microstructured grating period approaches the wavelength of the radiation. 3,4Form-birefringent nanostructures (FBN's) have several unique properties 3 that make them superior to naturally birefringent materials: (i) A high value for the strength of form birefringence, Dn͞n, can be obtained by the selection of substrate dielectric materials with a large refractive-index difference (here Dn and n are the difference and the average effective indices of refraction, respectively, for the two orthogonal polarizations); for example, a high-spatial-frequency surface-relief grating of rectangular profile on a GaAs substrate provides a Dn͞n value of ϳ0.63, which is much larger than those found for naturally birefringent materials (e.g., for calcite the value of Dn͞n is ϳ0.1).(ii) The magnitude of form birefringence, Dn, can be adjusted by variation of the duty ratio as well as of the shape of the microstructures. Such FBN's are useful for constructing polarization-selective beam splitters 6,7 and generalpurpose polarization-selective diffractive optical elements such as birefringent computer-generated holograms 8 (BCGH's). A BCGH is a general-purpose diffractive optical element that has two independent though arbitrary impulse responses for the two orthogonal linear polarizations. BCGH elements are useful in various applications. 8 In its original design 9 a BCGH consists of two surface-relief substrates with at least one of them birefringent. The two independent etch depths of the BCGH element provide the two degrees of freedom necessary to encode the two independent phase functions. However, the BCGH fabrication process can be simplif ied by use of a single FBN made of an isotropic substrate. One can obtai...
We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional beam voltages ͑Ͻ40 kV͒. Here we optimize the exposure and development conditions needed to generate such nanostructure arrays using polymethylmethacrylate as positive resist and isopropyl alcohol as a developer. Arrays of 12 nm dots with 25 nm period and 20 nm lines with 40 nm period were fabricated to show the resolution of this optimized process.
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