A study of exchange bias in IrMn/Co systems is presented. Temperature and thickness dependence studies have revealed nonmonotonic behavior in both exchange bias fiel and coercivity with both variables. In particular the exchange bias fiel shows a peak for low IrMn thicknesses that is suppressed at temperatures higher than about 200 K. Calculations using the domain state model of exchange biasing are able to describe all the features seen in the experimental data.

We investigate the longitudinal resistance of a semiconductor near-surface two-dimensional electron gas (2DEG) subjected to a magnetic barrier induced by the stray field from a single sub-micron ferromagnetic line on the surface of the device. The amplitude of the magnetic barrier is controlled by the application of an external magnetic field in the plane of the 2DEG. We show that this type of magnetoresistance can be used to deduce properties of the ferromagnetic line, so that our hybrid ferromagnet-semiconductor structure acts as a nanomagnetometer.

Spin crossover (SCO) molecules are promising bi-stable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal electrodes. Here we examine the switching properties of a [Fe(III)(EtOSalPet )(NCS)] SCO molecule that is specifically tailored for surface deposition and binding to only one gold electrode in a nanogap device. Temperature dependent conductivity measurements on SCO molecule containing electromigrated gold break junctions show voltage independent telegraphic-like switching between two resistance states at temperature below 200 K. The transition temperature is very different from the transition temperature of 83 K that occurs in a bulk film of the same material. This indicates that the bulk, co-operative SCO phenomenon is no longer preserved for a single molecule and that the surface interaction drastically increases the temperature of the SCO phenomenon. Another key finding of this work is that some devices show switching between multiple resistance levels. We propose that in this case, two SCO molecules are present within the nanogap with both participating in the electronic transport and switching.

Magnetic skyrmions are particle‐like deformations in a magnetic texture. They have great potential as information carriers in spintronic devices because of their interesting topological properties and favorable motion under spin currents. A new method of nucleating skyrmions at nanoscale defect sites, created in a controlled manner with focused ion beam irradiation, in polycrystalline magnetic multilayer samples with an interfacial Dzyaloshinskii–Moriya interaction, is reported. This new method has three notable advantages: 1) localization of nucleation; 2) stability over a larger range of external field strengths, including stability at zero field; and 3) existence of skyrmions in material systems where, prior to defect fabrication, skyrmions were not previously obtained by field cycling. Additionally, it is observed that the size of defect nucleated skyrmions is uninfluenced by the defect itself—provided that the artificial defects are controlled to be smaller than the inherent skyrmion size. All of these characteristics are expected to be useful toward the goal of realizing a skyrmion‐based spintronic device. This phenomenon is studied with a range of transmission electron microscopy techniques to probe quantitatively the magnetic behavior at the defects with applied field and correlate this with the structural impact of the defects.

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