Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.
Understanding interactions of magnetic textures with defects is crucial for applications such as racetrack memories or microwave generators. Such interactions appear on the few nanometer scale, where imaging has not yet been achieved with controlled external forces. Here, we establish a method determining such interactions via spin-polarized scanning tunneling microscopy in three-dimensional magnetic fields. We track a magnetic vortex core, pushed by the forces of the in-plane fields, and discover that the core (~10 4 Fe-atoms) gets successively pinned close to single atomic-scale defects. Reproducing the core path along several defects via parameter fit, we deduce the pinning potential as a mexican hat with short-range repulsive and long-range attractive part. The approach to deduce defect induced pinning potentials on the sub-nanometer scale is transferable to other non-collinear spin textures, eventually enabling an atomic scale design of defect configurations for guiding and reliable read-out in racetrack type devices.
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