Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (µPL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe.

Due to the low capacity of contemporary position-sensitive detectors in atom probe tomography (APT) to detect multiple events, material analyses that exhibit high numbers of multiple events are the most subject to compositional biases. To solve this limitation, some researchers have developed statistical correction algorithms. However, those algorithms are only efficient when one is confronted with homogeneous materials having nearly the same evaporation field between elements. Therefore, dealing with more complex materials must be accompanied by a better understanding of the signal loss mechanism during APT experiments. By modeling the evaporation mechanism and the whole APT detection system, it may be possible to predict compositional and spatial biases induced by the detection system. This paper introduces a systematic study of the impact of the APT detection system on material analysis through the development of a simulation tool.