A new approach to β-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. β-Ga2O3 single crystals 25 mm in diameter were grown in platinum-rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall.Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.
The growth of sapphire by the traditional vertical Bridgman (VB) method was studied by using various shapes of seed crystals and tungsten (W) crucibles shaped to match the seeds. Approximately 2-inch diameter, c-axis sapphire single crystals were reproducibly grown from three kinds of seed: thin, tapered and full diameter. Factors relating seed type to single-crystal growth are discussed, including the reproducibility of seeding processes, and the generation and elimination of low-angle grain boundaries (LAGBs). What was learned facilitated the subsequent growth of large-diameter, 3-, 4-and 6-inch, c-axis single-crystal sapphires from full-diameter seeds.
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