Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

Abstract

A new approach to β-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. β-Ga2O3 single crystals 25 mm in diameter were grown in platinum-rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall.Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane.

Numerical Modelling of the Czochralski Growth of β-Ga2O3

“…We used two orientations of the crystal: in Case 1, the growth direction is the b-axis ((010) plane in the growth direction) as in all of our growth experiments by the Czochralski method; in Case 2, the growth direction is the a*-axis ((100) plane in the growth direction). This orientation has not been used in the Czochralski growth but was observed in the vertical Bridgman growth [25]. The two orientations are shown in Figure 3.…”

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…[122] At this point in time, Ga 2 O 3 wafers can be fabricated in large volumes and at reasonable cost-with even lower costs possible should demand materialize. These wafers are fabricated from bulk single crystals synthesized by a variety of melt-growth techniques such as float-zone, [120,123] Czochralski, [124,125] vertical Bridgman, [126] and edge-defined film-fed growth (EFG) methods. [127][128][129] To date, EFG has an advantage over the other melt-growth methods in producing such wafers.…”

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

“…For most semiconductors, the implant activation temperature generally follows a two-thirds rule of thumb with respect to the melting point. 28 The melting temperature of Ga 2 O 3 is 1793-1820°C, 1,5,[29][30][31][32] so the 2/3 rule for implant activation annealing suggests temperatures in the range 1150-1250°C to achieve significant activation percentages. Activation annealing has typically been carried out at 900-1000°C for 30 min, with activation percentages approaching 60%.…”