We report phosphorescent sensitized fluorescent near-infrared (NIR) light-emitting electrochemical cells (LECs) utilizing a phosphorescent cationic transition metal complex [Ir(ppy)(2)(dasb)](+)(PF(6)(-)) (where ppy is 2-phenylpyridine and dasb is 4,5-diaza-9,9'-spirobifluorene) as the host and two fluorescent ionic NIR emitting dyes 3,3'-diethyl-2,2'-oxathiacarbocyanine iodide (DOTCI) and 3,3'-diethylthiatricarbocyanine iodide (DTTCI) as the guests. Photoluminescence measurements show that the host-guest films containing low guest concentrations effectively quench host emission due to efficient host-guest energy transfer. Electroluminescence (EL) measurements reveal that the EL spectra of the NIR LECs doped with DOTCI and DTTCI center at ca. 730 and 810 nm, respectively. Moreover, the DOTCI and DTTCI doped NIR LECs achieve peak EQE (power efficiency) up to 0.80% (5.65 mW W(-1)) and 1.24% (7.84 mW W(-1)), respectively. The device efficiencies achieved are among the highest reported for NIR LECs and thus confirm that phosphorescent sensitized fluorescence is useful for achieving efficient NIR LECs.

We study the influence of the carrier injection efficiency on the performance of light-emitting electrochemical cells (LECs) based on a hole-preferred transporting cationic transition metal complex (CTMC) [Ir(dfppz)(2)(dtb-bpy)](+)(PF(6)(-)) (complex 1) and an electron-preferred transporting CTMC [Ir(ppy)(2)(dasb)](+)(PF(6)(-)) (complex 2) (where dfppz is 1-(2,4-difluorophenyl) pyrazole, dtb-bpy is 4,4'-di(tert-butyl)-2,2'-bipyridine, ppy is 2-phenylpyridine and dasb is 4,5-diaza-9,9'-spirobifluorene). Experimental results show that even with electrochemically doped layers, the ohmic contacts for carrier injection could be formed only when the carrier injection barriers were relatively low. Thus, adding carrier injection layers in LECs with relatively high carrier injection barriers would affect carrier balance and thus would result in altered device efficiency. Comparison of the device characteristics of LECs based on complex 1 and 2 in various device structures suggests that the carrier injection efficiency of CTMC-based LECs should be modified according to the carrier transporting characteristics of CTMCs to optimize device efficiency. Hole-preferred transporting CTMCs should be combined with an LEC structure with a relatively high electron injection efficiency, while a relatively high hole injection efficiency would be required for LECs based on electron-preferred transporting CTMCs. Since the tailored carrier injection efficiency compensates for the unbalanced carrier transporting properties of the emissive layer, the carrier recombination zone would be located near the center of the emissive layer and exciton quenching near the electrodes would be significantly mitigated, rendering an improved device efficiency approaching the upper limit expected from the photoluminescence quantum yield of the emissive layer and the optical outcoupling efficiency from a typical layered light-emitting device structure.

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Staggered quantum well structures are studied to eliminate the influence of polarization-induced electrostatic field upon the optical performance of blue InGaN light-emitting diodes ͑LEDs͒. Blue InGaN LEDs with various staggered quantum wells which vary in their indium compositions and quantum well width are theoretically studied and compared by using the APSYS simulation program. According to the simulation results, the best optical characteristic is obtained when the staggered quantum well is designed as In 0.20 Ga 0.80 N ͑1.4 nm͒-In 0.26 Ga 0.74 N ͑1.6 nm͒ for blue LEDs. Superiority of this novelty design is on the strength of its enhanced overlap of electron and hole wave functions, uniform distribution of holes, and suppressed electron leakage in the LED device.