Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Liao, Chih Teng; Tsai, Min‐Chien; Liou, Bo Ting; Yen, Shwu-Huey; Kuo, Yen−Kuang

doi:10.1063/1.3471804

Cited by 76 publications

(31 citation statements)

References 53 publications

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“…Recently, III-nitride semiconductors have been widely employed for energy-efficiency device technologies, including light-emitting diodes (LEDs) for solid state lighting [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], visible diode lasers for both display and biosensing [20][21][22][23][24][25][26], photovoltaics and solar energy conversion [27][28][29], and thermoelectric heat conversion and active cooling materials [30][31][32][33][34][35][36][37][38][39]. In designing structures in nitride-based devices for photonics and electronics applications, the most-widely studied heterostructures have been primarily limited to AlGaN/GaN and InGaN/GaN configurations.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Zhang

et al. 2012

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Zhang

et al. 2012

Journal of Crystal Growth

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“…Therefore, great efforts have been made to improve the internal quantum efficiency (IQE) of LEDs, especially the large electron-hole wave function overlap quantum wells. The enhancement of spontaneous emission leads to the higher efficiency in green, yellow, and red spectral regime [3]- [7]. Indeed, the surface plasmon approach is also indicated to enhance the emission efficiency for multiple quantum wells (MQWs) [8], [9].…”

Section: Introductionmentioning

confidence: 99%

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Chen

Shih

et al. 2012

J. Lightwave Technol.

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Abstract-This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.Index Terms-Light-emitting diodes (LEDs), GaN, quantum dots (QDs), phosphor.

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“…An increased overlap between hole and electron wavefunctions can also be achieved in QWs grown on polar planes by tailoring the shape of the QW along the growth direction. These are referred to as large-overlap QWs, and both stepfunction compositional grading [108][109] as well as linearly grading 110 have been proposed. However, an additional advantage with InGaN QWs on nonpolar and semipolar planes is the anisotropic optical gain leading to VCSELs with a preferred polarization state 35 without the use of for example surface gratings 111,112 .…”

mentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Cited by 76 publications

References 53 publications

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Progress and challenges in electrically pumped GaN-based VCSELs

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